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All Journal International Journal of Power Electronics and Drive Systems (IJPEDS)
Anna Gina Perri
Polytechnic University of Bari, ITALY Electronic Devices Laboratory Department of Electrical and Information Engineering
Control & Systems Engineering Electrical & Electronics Engineering

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A Comparative Study of Power Semiconductor Devices for Industrial PWM Inverters Gianluca Sena; Roberto Marani; Gennaro Gelao; Anna Gina Perri
International Journal of Power Electronics and Drive Systems (IJPEDS) Vol 7, No 4: December 2016
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.11591/ijpeds.v7.i4.pp1420-1428

Abstract

The growing demand of energy translates into efficiency requirements of energy conversion systems and electric drives. Both these systems are based on Pulse Width Modulation (PWM) Inverter. In this paper we firstly present the state of art of the main types of semiconductors devices for Industrial PWM Inverter. In particular we examine the last generations of Silicon Carbide (SiC) MOSFETs and Insulated Gate Bipolar Transistors (IGBTs) and we present a comparison between these devices, obtained by SPICE simulations, both for static characteristics at different temperatures and for dynamic ones at different gate resistance, in order to identify the one which makes the PWM inverter more efficient.
Co-Authors Gennaro Gelao Gianluca Sena Roberto Marani