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All Journal International Journal of Power Electronics and Drive Systems (IJPEDS)
Jose Lipovetzky
Centro Atomico Bariloche and Instituto Balseiro
Control & Systems Engineering Electrical & Electronics Engineering

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Performance evaluation of GaN and Si based driver circuits for a SiC MOSFET power switch Martin J. Carra; Hernan Tacc; Jose Lipovetzky
International Journal of Power Electronics and Drive Systems (IJPEDS) Vol 12, No 3: September 2021
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.11591/ijpeds.v12.i3.pp1293-1303

Abstract

Silicon Carbide (SiC), new power switches (PSW) require new driver circuits which can take advantage of their new capabilities. In this paper a novel Gallium Nitride (GaN) based gate driver is proposed as a solution to control SiC power switches. The proposed driver is implemented and is performance compared with its silicon (Si) counterparts on a hard switching environment. A thorough evaluation of the energy involved in the switching process is presented showing that the GaN based circuit exhibits similar output losses but reduces the control power needed to operate at a specified frequency.
Co-Authors Hernan Tacc Martin J. Carra