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Nurul Anati Salleh
Universiti Teknologi Malaysia
Computer Science & IT

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Humidity effect on electrical properties of graphene oxide back-to-back Schottky diode Shaharin Fadzli Abd Rahman; Nurul Anati Salleh; Mastura Shafinaz Zainal Abidin; Amirjan Nawabjan
TELKOMNIKA (Telecommunication Computing Electronics and Control) Vol 17, No 5: October 2019
Publisher : Universitas Ahmad Dahlan

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.12928/telkomnika.v17i5.12800

Abstract

A Schottky diode-based sensor is a promising structure for high sensitive and low power sensor. This paper investigates a device called back-to-back Schottky diode (BBSD) for humidity sensing operation. The BBSD provides simpler device configuration that can be fabricated using less complicated process. The current-voltage characteristic of the fabricated BBSD was measured at different relative humidity. From the obtained characteristics, series resistance, barrier height and ideality factor was analyzed. The device current increased at higher humidity level. The current increase could be associated to the decrease in series resistance, barrier height and ideality factor. When humidity decreased from 11 % to 97%, the barrier height showed reduction of 0.1 eV. The barrier height reduction was explained by considering electric field-induced reduction of graphene oxide. The observed result confirmed the device feasibility as promising simple and low cost humidity sensor.
Co-Authors Amirjan Nawabjan Mastura Shafinaz Zainal Abidin Shaharin Fadzli Abd Rahman