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Dianzhong Wen
Heilongjiang University
Computer Science & IT

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Research on Silicon-based Planar Spiral Inductance Coil Based on Microelectromechanical System Gang Li; Xiaofeng Zhao; Dianzhong Wen; Yang Yu
TELKOMNIKA (Telecommunication Computing Electronics and Control) Vol 13, No 4: December 2015
Publisher : Universitas Ahmad Dahlan

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.12928/telkomnika.v13i4.1818

Abstract

This paper describes a kind of silicon-based plane spiral inductance coil ,whose layout size and fabrication technology process are given. The production of inductance coil adopts the method of an internal down-lead produced by ohm contact electrode which is formed by heavily boron- diffused and the Al evaporated on the surface of N-type high resistivity silicon wafer. Processing the silicon cup on The back of the silicon wafer using Microelectromechanical system (MEMS) technology, on the basis of thickness reduction of the inductance coil substrate, the porous array substrate of about 5μm thickness is obtained by laser drilling on the underside of the silicon cup, which reduces the vortex of substrate, and greatly improves the Q value of inductance coil. Analyze the effects of series resistance of the coil and metal layer thickness on the Q value in the condition of low frequency and high frequency, and Ansys software is used to simulate the inductance coil current density and magnetic induction intensity, to determine the optimum substrate thickness of inductance coil. The silicon-based plane spiralind inductance coil has the advantages of simple manufacturing process and is compatible with IC technology, compared with other manufacturing method, so it has a wide application prospect.
Research on Electromagnetic Excitation Resonant Sensor Based on Microelectromechanical System Gang Li; Xiaofeng Zhao; Dianzhong Wen; Yang Yu
TELKOMNIKA (Telecommunication Computing Electronics and Control) Vol 13, No 4: December 2015
Publisher : Universitas Ahmad Dahlan

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.12928/telkomnika.v13i4.1740

Abstract

In this paper, an electromagnetic excitation resonant sensor was designed based on Microelectromechanical system (MEMS) technology. In this new sensor, four nc-Si/c-Si heterojunction p-MOSFETs are manufactured by using the technique of MEMS on the N-type orientation high resistance silicon wafer, and a Wheatstone bridge is composed of four nc-Si/c-Si heterojunction MOSFETs channel resistances, output voltage of the bridge circuit changes according to the applied pressure. A vibration will be generated when an alternating current is applied to the inductance coil of electromagnetic excitation resonant sensor, the maximum power produced in the central part of the four edges of silicon membrane, whose frequency and amplitude are associated with the current in the inductance coil, and the applied pressure P can be detected. Using mechanics and electromagnetism coupling field analysis by Ansys software, the simulation to vibration situation of the silicon membrane of sensor was carried on when vertical magnetic field and alternating current were loaded. Experimental results show that, as the operating voltage is constant, with the increase of current in the inductance coil the conversion of applied pressure increases, and the output voltage of nc-Si/c-Si heterojunction MOSFETs pressure sensor is proportional to the increase of coil magnetic field i.e. the increase of pressure, the experimental results are consistent with the simulation results.
Co-Authors Gang Li Xiaofeng Zhao Yang Yu