Article Per Year (5 Year)
p-Index From 2021 - 2026
0.553
P-Index
This Author published in this journals
All Journal TELKOMNIKA (Telecommunication Computing Electronics and Control) Bulletin of Electrical Engineering and Informatics
Fauziyah Salehuddin
Universiti Teknikal Malaysia Melaka (UTeM)
Computer Science & IT Electrical & Electronics Engineering

Published : 2 Documents Claim Missing Document
Claim Missing Document
Check
Articles

Found 2 Documents
Search

 1 
Temperature monitoring using polymer optical fiber with integration to the internet of things Hazura Haroon; Siti Khadijah Idris; Anis Suhaila Mohd Zain; Hanim Abdul Razak; Fauziyah Salehuddin
Bulletin of Electrical Engineering and Informatics Vol 10, No 1: February 2021
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.11591/eei.v10i1.2673

Abstract

In this paper, a polymer optical fiber (POF) is applied for temperature measuring of water solution using a light source of 650nm. The aim is to analyse the impact of temperature variations on the output of POF sensor device in terms of output power and sensitivity. From the study, the POF sensor shows a linear trend when the temperature is increased from 30°C to 80°C with the sensitivity of the polymer optical fiber for output power to the temperature are 0.00973 dBm/°C or 0.14797 nW/°C, for optical characterization and 0.0011 V/°C for electrical characterization. The integration of the Internet of Things to the system helps the user to monitor the temperature of various spaces anywhere at any time. The sensed values are controlled by Arduino Uno R3 and then sent to Blynk to provide wireless monitoring by the user. 
Optimization of 14 nm double gate Bi-GFET for lower leakage current Nur Hazwani Naili Mohd Nizam; Afifah Maheran Abdul Hamid; Fauziyah Salehuddin; Khairil Ezwan Kaharudin; Noor Faizah Zainul Abidin; Anis Suhaila Mohd Zain
TELKOMNIKA (Telecommunication Computing Electronics and Control) Vol 21, No 1: February 2023
Publisher : Universitas Ahmad Dahlan

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.12928/telkomnika.v21i1.23462

Abstract

In recent years, breakthroughs in electronics technology have resulted in upgrades in the physical properties of the metal oxide semiconductor field effect transistor (MOSFET) toward smaller sizes and improvements in both quality and performance. Hence, the growth field effect transistor (GFET) is being promoted as one of the worthy contenders due to its superior material characteristics. A 14 nm horizontal double-gate bilayer graphene FET with a high-k/metal gate is proposed, which is composed of hafnium dioxide (HfO2) and tungsten silicide (WSix) respectively. It is simulated and modelled using silvaco ATHENA and ATLAS technology computer-aided design (TCAD) tools, as well as the Taguchi L9 orthogonal array (OA). The threshold voltage (VTH) adjustment implant dose, VTH adjustment implant energy, source/drain (S/D) implant dose, and S/D implant energy have all been investigated as process parameters. While the VTH adjustment tilt angle and the S/D implant tilt angle have both been investigated as noise factors. When compared to the initial findings before optimization, the IOFF has a value of 29.579 nA/µm, indicating a significant improvement. Findings from the optimization technique demonstrate excellent device performance with an IOFF of 28.564 nA/µm, which is closer to the international technology roadmap semiconductor (ITRS) 2013 target than before.
Co-Authors Afifah Maheran Abdul Hamid Anis Suhaila Mohd Zain Hanim Abdul Razak Hazura Haroon Khairil Ezwan Kaharudin Noor Faizah Zainul Abidin Nur Hazwani Naili Mohd Nizam Siti Khadijah Idris