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All Journal Indonesian Journal of Electrical Engineering and Informatics (IJEEI)
shailaja chandrakant patil
savitribai phule pune university, pune
Computer Science & IT Electrical & Electronics Engineering

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Analytical current Model for Dual Material Double Gate Junctionless Transistor santosh chandrakant wagaj; shailaja chandrakant patil
Indonesian Journal of Electrical Engineering and Informatics (IJEEI) Vol 7, No 3: September 2019
Publisher : IAES Indonesian Section

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (745.515 KB) | DOI: 10.52549/ijeei.v7i3.581

Abstract

A Transistor model with bulk current is proposed in this article for long channel dual material double gate junction less transistor. The influence of different device parameters such as body thickness, channel length, oxide thickness, and the doping density on bulk current is investigated. The proposed model is validated and compared with simulated data using Cogenda TCAD. The model is designed by Poison’s equation and depletion approximation. Current driving capability of MOSFET is improved by dual material gate compare to single material gate.
Co-Authors santosh chandrakant wagaj