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Krishna C. Persaud
The University of Manchester, UK
Physics

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Design and Fabrication of All Organic Field Effect Transistor Suprapto Suprapto; Krishna C. Persaud
Jurnal Fisika dan Aplikasinya Vol 7, No 1 (2011)
Publisher : Lembaga Penelitian dan Pengabdian Kepada Masyarakat, LPPM-ITS

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (497.972 KB) | DOI: 10.12962/j24604682.v7i1.898

Abstract

All organic field effect transistor consist of poly-3-hexyloxythiophene, undoped poly-3,3”-didecyl-2,2’,5’,2”-terthiophene and polypyrrole has been successfully developed. Poly-3-hexyloxythiophene was applied as gate material. Undoped poly-3,3”-didecyl-2,2’,5’,2”-terthiophene was used as insulating layer and polypyrrole was applied as source-drain material. The multilayer polymers were deposited onto gold source-drain and gate electrodes by electropolymerization method. The spaces between the gold electrodes were 50 μm. The transistor shows a current amplification upon increasing gate voltages. Good conductivity stability upon increasing gate voltages was observed. Overall the field effect transistor has properties that similar to inorganic field effect transistor.
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