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Jurusan Fisika FMIPA, Universitas Sebelas Maret, Jl. Ir. Sutami 36A, Kentingan, Surakarta 57126
Physics

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Limit Efek Stochastik untuk Thermally Assisted Magnetization Reversal Hanin Firdausi; U Utari; Budi Purnama
Jurnal Fisika dan Aplikasinya Vol 12, No 2 (2016)
Publisher : Lembaga Penelitian dan Pengabdian Kepada Masyarakat, LPPM-ITS

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (146.766 KB) | DOI: 10.12962/j24604682.v12i2.1337

Abstract

Evaluasi limit stochastik untuk thermally assisted magnetization reversal (TAMR) dibahas pada paper ini. Simulasi ini dilakukan dengan menyelesaikan persamaan Landau-Liftshitz-Gilbert (LLG) dengan asumsi nanopartikel CoPtCr magnetik dengan anisotropi tegaklurus sebagai storage cell memory. Magnetisasi mulai searah dengan medan eksternal sebesar H = 2,0 kOe, saat temperatur penulisan sebesar TW = 95,2%TC dan meningkat terus hingga hingga 85% saat TW = 97,86%TC. Sehingga keadaan ini (TW = 97.86%TC) dianggap sebagai batas limit stochastik untuk TAMR pada penelitian ini. Akhirnya, peningkatan temperatur penulisan 99,97%TC hanya menaikkan prosentase MX searah medan eksternal H sebesar 10%.AbstractEvaluation of stochastic limit for thermally assisted magnetization reversal (TAMR) discussed in this paper. This simulation is done by solving the equation Landau-Liftshitz-Gilbert (LLG) assuming nanoparticles CoPtCrperpendicular magnetic anisotropy as a memory cell storage. The magnetization direction aligning along to the external field direction of H = 2.0 kOe started when the writing temperature TW is 95.2%TC and increased steadily up to 85% when TW = 97.86% of TC. So that this condition (TW = 97.86% of TC) is regarded as the limit of stochastic for TAMR in this study. Finally, the writing temperature increase of 99.97%TC only raise thepercentage of MX in the direction of the external field H by 10%.
Co-Authors Hanin Firdausi U Utari