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All Journal Jurnal Teknik Elektro
Engeline Shintadewi Julian
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Electrical & Electronics Engineering

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PENGARUH BENTUK PROFIL GERMANIUM PADA FREKUENSI CUTOFF HBT SIGE Julian, Engeline Shintadewi
Jurnal Teknik Elektro Vol 3, No 1 (2003)
Publisher : Jurnal Teknik Elektro

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Abstract

The effects of different shape of germanium profiles in the base to the cutoff frequency ofSi/SiGe/Si HBTs are analyzed. The shapes of germanium profile in the base are triangles. Inthe simulations, the effect of bandgap narrowing due to the addition of germanium in thebase of the HBT is included. The simulations are done with BIPOLE3V4.2.3.E. The resultsshows that Ge profiles in the base have influence in the maximum cutoff frequency of theHBTs.Keywords: SiGe, HBT, hetero junction bipolar transistor, frequency cutoff
PROFIL GERMANIUM SEGIEMPAT PADA TRANSISTOR BIPOLAR SILIKON-GERMANIUM Julian, Engeline Shintadewi
Jurnal Teknik Elektro Vol 1, No 2 (2002)
Publisher : Jurnal Teknik Elektro

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Abstract

This paper presents a study of the effect of different starting edges position in the base ofSi/SiGe/Si HBTs. The germanium profile in the base under study is rectangular. In thesimulations, the effect of band gap narrowing due to heavy doping and band gap narrowingdue to the addition of germanium in the base of the HBT are included. The simulations aredone with BIPOLE3. The results show that the starting edge positions have strong influence inthe current gain and maximum transit frequency of the HBTsKeywords: SiGe, HBT, band gap narrowing, Bipole 3.
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