Article Per Year (5 Year)
p-Index From 2021 - 2026
0
P-Index
This Author published in this journals
All Journal Journal of Mathematical and Fundamental Sciences
Dahlang Tahir
1Dep. of Physics, Hasanuddin University, Makassar, Indonesia
Astronomy Chemistry Earth & Planetary Sciences Mathematics Physics

Published : 1 Documents Claim Missing Document
Claim Missing Document
Check
Articles

Found 1 Documents
Search

 1 
Band Alignment and Optical Properties of (ZrO2)0.66(HfO2)0.34 Gate Dielectrics Thin Films on p-Si (100) Dahlang Tahir; Hee Jae Kang; Sven Tougaard
Journal of Mathematical and Fundamental Sciences Vol. 43 No. 3 (2011)
Publisher : Institute for Research and Community Services (LPPM) ITB

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.5614/itbj.sci.2011.43.3.5

Abstract

(ZrO2)0.66(HfO2)0.34 dielectric films on p-Si (100) were grown by atomic layer deposition method, for which the conduction band offsets, valence band offsets and band gaps were obtained by using X-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy. The band gap, valence and conduction band offset values for (ZrO2)0.66(HfO2)0.34 dielectric thin film, grown on Si substrate were about 5.34, 2.35 and 1.87 eV respectively. This band alignment was similar to that of ZrO2. In addition, the dielectric function (k, ω), index of refraction n and the extinction coefficient k for the (ZrO2)0.66(HfO2)0.34 thin films were obtained from a quantitative analysis of REELS data by comparison to detailed dielectric response model calculations using the QUEELS-ε (k,ω)-REELS software package. These optical properties are similar with ZrO2 dielectric thin films.
Co-Authors Hee Jae Kang Sven Tougaard