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All Journal International Journal of Electrical and Computer Engineering Computer Science and Information Technologies
Noureddine Maouhoub
Ibn Zohr University
Computer Science & IT Electrical & Electronics Engineering Engineering

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Numerical approach for extraction of photovoltaic generator single-diode model parameters Abdelaaziz Benahmida; Noureddine Maouhoub; Hassan Sahsah
Computer Science and Information Technologies Vol 2, No 2: July 2021
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.11591/csit.v2i2.p58-66

Abstract

In this work, a numerical approach has been proposed to estimate the five single-diode circuit model physical parameters of photovoltaic generators from their experimental current-voltage characteristics. Linear least square method has been used to solve the system of three linear equations to express the shunt resistance, the saturation current and the photocurrent as a function of the series resistance and the ideality factor. Two key points have been used to solve the system of two nonlinear equations to extract values of series resistance and ideality factor. The advantage of the proposed method with respect of existing numerical techniques is that use only two key points of the experimental characteristic and need only two initial guesses and does not use any approximation. To evaluate the proposed method, three PV generators data have been used to compare the experimental and the theoretical curves. The application of the proposed method provides a good agreement with the experimental.
Extraction of series resistance and mobility degradation parameter in MOSFETs using iterative method Noureddine Maouhoub; Khalid Rais
Computer Science and Information Technologies Vol 1, No 1: May 2020
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.11591/csit.v1i1.p26-31

Abstract

Series resistance and mobility attenuation parameter are parasitic phenomena that limit the scaling of advanced MOSFETs. In this work, an iterative method is proposed to extract the series resistance and mobility degradation parameter in short channel MOSFETs. It also allows us to extract the surface roughness amplitude. The principle of this method is based on the exponential model of effective mobility and the least squares methods. From these, two analytical equations are obtained to determine the series resistance and the low field mobility as function of the mobility degradation. The mobility attenuation parameter is extracted using an iterative procedure to minimize the root means squared error (RMSE) value. The results obtained by this technique for a single short channel device have shown the good agreement with measurements data at strong inversion. 
Extraction of photovoltaic generator parameters through combination of an analytical and iterative approach Abdelaaziz Benahmida; Noureddine Maouhoub; Kawtar Tifidat; Hassan Sahsah
International Journal of Electrical and Computer Engineering (IJECE) Vol 12, No 5: October 2022
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.11591/ijece.v12i5.pp4529-4537

Abstract

In the present work, we propose an improved method based on a combination of an analytical and iterative approach to extract the photovoltaic (PV) module parameters using the measured current-voltage characteristics and the simple diode model. First, we calculate the series resistance using a set of analytical formulas for the base values of the three current-voltage curves. Then, the three other parameters are analytically expressed as functions of serial resistance and ideality factor based on the linear least-squares method. Finally, the ideality factor is calculated applying an iterative algorithm to minimize the normalized root mean square error (NRMSE) value. The proposed method was validated with a real experimental set of two PV generators, which showed the best fit to the I-V curve. Moreover, the proposed method needs only the initial value of the ideality factor.
Co-Authors Abdelaaziz Benahmida Hassan Sahsah Kawtar Tifidat Khalid Rais