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Noureddine Maouhoub
Ibn Zohr University
Computer Science & IT Engineering

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Numerical approach for extraction of photovoltaic generator single-diode model parameters Abdelaaziz Benahmida; Noureddine Maouhoub; Hassan Sahsah
Computer Science and Information Technologies Vol 2, No 2: July 2021
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.11591/csit.v2i2.p58-66

Abstract

In this work, a numerical approach has been proposed to estimate the five single-diode circuit model physical parameters of photovoltaic generators from their experimental current-voltage characteristics. Linear least square method has been used to solve the system of three linear equations to express the shunt resistance, the saturation current and the photocurrent as a function of the series resistance and the ideality factor. Two key points have been used to solve the system of two nonlinear equations to extract values of series resistance and ideality factor. The advantage of the proposed method with respect of existing numerical techniques is that use only two key points of the experimental characteristic and need only two initial guesses and does not use any approximation. To evaluate the proposed method, three PV generators data have been used to compare the experimental and the theoretical curves. The application of the proposed method provides a good agreement with the experimental.
Extraction of series resistance and mobility degradation parameter in MOSFETs using iterative method Noureddine Maouhoub; Khalid Rais
Computer Science and Information Technologies Vol 1, No 1: May 2020
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.11591/csit.v1i1.p26-31

Abstract

Series resistance and mobility attenuation parameter are parasitic phenomena that limit the scaling of advanced MOSFETs. In this work, an iterative method is proposed to extract the series resistance and mobility degradation parameter in short channel MOSFETs. It also allows us to extract the surface roughness amplitude. The principle of this method is based on the exponential model of effective mobility and the least squares methods. From these, two analytical equations are obtained to determine the series resistance and the low field mobility as function of the mobility degradation. The mobility attenuation parameter is extracted using an iterative procedure to minimize the root means squared error (RMSE) value. The results obtained by this technique for a single short channel device have shown the good agreement with measurements data at strong inversion. 
Co-Authors Abdelaaziz Benahmida Hassan Sahsah Khalid Rais