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All Journal Atom Indonesia Journal Komputasi: Jurnal Ilmiah Ilmu Komputer dan Matematika Edusentris: Jurnal Ilmu Pendidikan dan Pengajaran Newton-Maxwell Journal of Physics
H. Hardhienata
Department Of Physics, Bogor Agricultural University Jl. Darmaga Gedung Wing S Bogor16680, Indonesia
Astronomy Computer Science & IT Control & Systems Engineering Decision Sciences, Operations Research & Management Earth & Planetary Sciences Education Electrical & Electronics Engineering Languange, Linguistic, Communication & Media Materials Science & Nanotechnology Mechanical Engineering Physics Other

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Journal : Atom Indonesia Journal

 1 
Surface Roughness and Grain Size Characterization of Annealing Temperature Effect For Growth Gallium and Tantalum Doped Ba0.5 Sr0.5TiO3Thin Film Irzaman Irzaman; H. Darmasetiawan; H. Hardhienata; M. Hikam; P. Arifin; S.N. Jusoh; S. Taking; Z. Jamal; M.A. Idris
Atom Indonesia Vol 35, No 1 (2009): January 2009
Publisher : PPIKSN-BATAN

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.17146/aij.2009.48

Abstract

Thin films 10 % gallium oxide doped barium strontium titanate (BGST) and 10 % tantalum oxide doped barium strontium titanate (BTST) were prepared on p-type Si (100) substrates using chemical solution deposition (CSD) method with 1.00 M precursor. The films were deposited by spin coating method with spinning speed at 3000 rpm for 30 seconds. The post deposition annealing of the films were carried out in a furnace at 200oC, 240oC, 280oC (low temperature) for 1 hour in oxygen gas atmosphere. The surface roughness and grain size analysis of the grown thin films are described by atomic force microscope (AFM) method at 5000 nm x 5000 nm area. The rms surface roughness BGST thin films at 5000 nm x 5000 nm area are 0.632 nm, 0.564 nm, 0.487 nm for temperature 200oC, 240oC, 280oC, respectively, whereas the grain size (mean diameter) are 238.4 nm, 219.0 nm, 185.1 nm for temperature 200oC, 240oC, 280oC, respectively. In fact, to increase annealing temperature from 200oC to 280oC would result in decreasing the rms roughness and grain size. Therefore, rms roughness and grain size would have the strong correlation annealing temperature. Received: 9 November 2008; Revised: 24 August 2009; Accepted: 25 August 2009
Electrical Properties of Photodiode Ba0.25Sr0.75TiO3 (BST) Thin Film Doped with Ferric Oxide on p-type Si (100) Substrate using Chemical Solution Deposition Method Irzaman Irzaman; H. Syafutra; H. Darmasetiawan; H. Hardhienata; R. Erviansyah; F. Huriawati; Akhiruddin Akhiruddin; M. Hikam; P. Arifin
Atom Indonesia Vol 37, No 3 (2011): December 2011
Publisher : PPIKSN-BATAN

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.17146/aij.2011.81

Abstract

In this paper we have grown pure Ba0.25Sr0.75TiO3 (BST) and BST doped by Ferric Oxide Fe2O3 (BFST) with doping variations of 5%, 10%, and 15% above type-p Silicon (100) substrate using the chemical solution deposition (CSD) method with spin coating technique at rotation speed of 3000 rpm, for 30 seconds. BST thin film are made with a concentration of 1 M 2-methoxyethanol and annealing temperature of 850oC for the Si (100) substrate. Characterization of the thin film is performed for the electrical properties such as the current-voltage (I-V) curve using Keithley model 2400 as well as dielectric constant, time constant, pyroelectric characteristics, and depth measurement. The results show that the thin film depth increases if the concentration of the Ferric Oxide doping increases. The I-V characterization shows that the BST and BFST thin film has photodiode properties. The dielectric constant increases with the addition of doping. The maximum dielectric constant value is obtained for 15 % doping concentration namely 83.1 for pure BST and 6.89, 11.1, 41.63 and 83.1, respectively for the Ferric Oxide doping based BST with concentration of 5%, 10%, and 15%. XRD spectra of 15% of ferric oxide doped BST thin film tetragonal phase, we carried out the lattice constant were a = b = 4.203 Å; c = 4.214 Å; c/a ratio = 1.003. Received: 01 February 2010; Revised: 04 October 2011; Accepted: 02 November 2011
Co-Authors Adly Maulana Suherman Akhiruddin Akhiruddin F. Huriawati Firda Aulya Syamani H. Darmasetiawan H. Darmasetiawan H. Syafutra Husin Alatas Indarini Dwi Pursitasari Irzaman, Irzaman M. Hikam M. Hikam M.A. Idris Negara, Teguh Puja okta riza P. Arifin P. Arifin R. Erviansyah S. Taking S.N. Jusoh Setiawan, Asep S Siti Nikmatin Z. Jamal