Moh. Adhib Ulil Absor
Department of Physics, Faculty of Mathematics and Natural Sciences, Universitas Gadjah Mada, Sekip Utara BLS 21, Yogyakarta 55281, Indonesia

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Prediction of Rashba Effect on Two-dimensional MX Monochalcogenides (M = Ge, Sn and X = S, Se, Te) with Buckled Square Lattice Ibnu Jihad; Juhri Hendrawan; Adam Sukma Putra; Kuwat Triyana; Moh. Adhib Ulil Absor
Indonesian Journal of Chemistry Vol 20, No 3 (2020)
Publisher : Universitas Gadjah Mada

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (725.678 KB) | DOI: 10.22146/ijc.49331

Abstract

The Rashba splitting are found in the buckled square lattice. Here, by applying fully relativistic density-functional theory (DFT) calculation, we confirm the existence of the Rashba splitting in the conduction band minimum of various two-dimensional MX monochalcogenides (M = Ge, Sn and X = S, Se, Te) exhibiting a pair inplane Rashba rotation of the spin textures. A strong correlation has also been found between the size of the Rashba parameter and the atomic number of chalcogen atom for Γ and M point in the first Brillouin zone. Our investigation clarifies that the buckled square lattice are promising for inducing the substantial Rashba splitting suggesting that the present system is promising for spintronics device.
Polarity Effect on the Electronic Structure of Molybdenum Dichalcogenides MoXY (X, Y = S, Se): A Computational Study Based on Density-Functional Theory Salsabila Amanda Putri; Edi Suharyadi; Moh. Adhib Ulil Absor
Indonesian Journal of Chemistry Vol 21, No 3 (2021)
Publisher : Universitas Gadjah Mada

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.22146/ijc.57949

Abstract

Computational research based on the Density Functional Theory (DFT) has been performed to explore the electronic structure of monolayer material Transition Metal Dichalcogenides (TMDCs) Molybdenum Dichalcogenides MoXY (X; Y = S; Se) in the first Brillouin zone by breaking its mirror symmetry due to the polarity effect. Our study discovered that Rashba spin-splitting could be identified around the Γ point by proposing the polarity effect on the system. Moreover, the anisotropic characteristic of Rashba spin-splitting in this system can be explicitly analyzed by using  perturbation theory and the third-order symmetry group analysis. By performing the spin textures analysis, this research also recognizes the in-plane direction of spin textures. The tunable characteristic of the Rashba parameter of this monolayer polar MoSSe system under the strain effects control exhibits its potential to be the candidate of semiconductor material for the Spin Field Effect Transistor (SFET) device.