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All Journal Journal La Multiapp
Wut Hmone Kyaw
Technological University (Sagaing), Sagaing, Myanmar
Aerospace Engineering Automotive Engineering Chemical Engineering, Chemistry & Bioengineering Civil Engineering, Building, Construction & Architecture Engineering

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Simulation of Energy Bands for Metal and Semiconductor Junction Wut Hmone Kyaw; May Nwe Myint Aye
Journal La Multiapp Vol. 1 No. 2 (2020): Journal La Multiapp
Publisher : Newinera Publisher

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.37899/journallamultiapp.v1i2.107

Abstract

This paper presents the metal-semiconductor band structure analysis for metal-oxide semiconductor field effect transistor (MOSFET). The energy bands were observed at metal-semiconductor and semiconductor-metal junctions. The simulation results show energy variations by using gallium-nitride (GaN) material. Gallium nitride based MOSFETs have some special material properties and wide band-gap. From the energy band, the condition of contact potential, conduction and valence band-edges can be analyzed. The computerized simulation results for getting the band layers are investigated with MATLAB programming language.
Co-Authors May Nwe Myint Aye