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Hadaate Ullah
Southern University Bangladesh

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Journal : Indonesian Journal of Electrical Engineering and Computer Science

 1 
Optical Properties of Cadmium Oxide (CdO) Thin Films Hadaate Ullah; Ridoanur Rahaman; Shahin Mahmud
Indonesian Journal of Electrical Engineering and Computer Science Vol 5, No 1: January 2017
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.11591/ijeecs.v5.i1.pp81-84

Abstract

Cadmium (Cd) is a soft, silver-white or blue lustrous metal typically found in mineral deposits with lead, zinc and copper. Cadmium Oxide thin films have been prepared on a glass substrate at 3500C temperature by implementing the Spray Pyrolysis method. The direct and indirect band gap energies are determined using spectral data. The direct and indirect band gap energies decrease with the increasing film thickness. It is noted that for the same film thickness the direct band gap energy is greater than indirect band gap energy. The transmittance increases with the increasing wavelength for annealed and deposited films. It is also noted that for the same wavelength the transmittance for deposited films is greater than the transmittance for annealed films.
The Effect of Deposition Rate on the Electrical Properties of Indium Tin Oxide (ITO) Thin Films Hadaate Ullah; Shahin Mahmud; Fahmida Sharmin Jui
Indonesian Journal of Electrical Engineering and Computer Science Vol 16, No 2: November 2015
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.11591/ijeecs.v16.i2.pp286-290

Abstract

Indium-tin oxide (ITO) which is optically transparent is referred as a “universal” electrode for various optoelectronic devices such as organic light emitting diodes (OLEDs). It is scientifically proved that the performance of OLEDs raises up significantly by exposing the ITO surface to oxygen plasma. This study employs conducting atomic force microscopy (C-AFM) for unique nanometer-scale mapping of the local current density of a vapor-deposited ITO film. Indium Tin Oxide (ITO) thin films have been prepared by using the reactive evaporation method on glass substrates in an oxygen atmosphere. It is found that the deposition rate plays a vital role in controlling the electrical properties of the ITO thin films. The resistivity and the electrical conductivity were also investigated. The electrical resistivity of 3.10 x10 –6 Ωm has been obtained with a deposition rate of 2 nm/min.
Identification of Brain disorders by Sub-band Decomposition of EEG signals and Measurement of Signal to Noise Ratio Hadaate Ullah; Shahin Mahmud; Rubana Hoque Chowdhury
Indonesian Journal of Electrical Engineering and Computer Science Vol 4, No 3: December 2016
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.11591/ijeecs.v4.i3.pp568-579

Abstract

In the case of medical science, one of the most restless researches is the identification of abnormalities in brain. Electroencephalogram (EEG) is the main tool for determining the electrical activity of brain and it contains rich information associated to the varieties physiological states of brain. The purpose of this task is to identify the EEG signal as order or disorder. It is proposed to enrich an automated system for the identification of brain disorders. An EEG signal of a patient has been taken as a sample. The simulation has been done by MATLAB. The file which consists of the signal has been called in and plotted the signals in MATLAB. The proposed system covers pre-processing, feature extraction, feature selection and classification. By the pre-processing the noises are ejected. In this case the signal has been filtered using band pass filter. The Discrete Wavelet Transform (DWT) has been used to decompose the EEG signal into Sub-band signal. The feature extraction methods have been used to extract the EEG signal into frequency domain and the time domain features. The SNR (Signal to Noise ratio) is obtained in this work is 1.1281dB.
Electrical Properties of Indium doped Alumina (Al2O3) Thin Films Hadaate Ullah; Shahin Mahmud
Indonesian Journal of Electrical Engineering and Computer Science Vol 14, No 2: May 2015
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar

Abstract

To know the electrical properties of any materials is very important for practical application of that material. In this paper I have tried to find out the proper electrical properties of Indium doped Alumina (Al2O3) for practical application of this Alumina. For this purpose all thin films are deposited on glass substrate by electron beam evaporation technique at a pressure of about 1.5 x 10-6 torr and at temperature of 307K. The thickness of Indium doped Al2O3 films (25%w, 30%w and 40% w of In2O3) range from 68 nm to 183 nm. For 25% In2O3 doped alumina the conductivity at room temperature is 24.10mho/cm, for 30% In2O3 doped alumina this value is 82.99mho/cm and for 40% In2O3 doped alumina this is 129.10mho/cm. The resistivity and sheet resistance decrease with the increase of doping concentration that means the conductivity increases with doping concentration. DOI: http://dx.doi.org/10.11591/telkomnika.v14i2.7747 
Co-Authors Fahmida Sharmin Jui Ridoanur Rahaman Rubana Hoque Chowdhury Shahin Mahmud Shahin Mahmud