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Abdul Manaf Hashim
Universiti Teknologi Malaysia

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Back-to-Back Schottky Diode from Vacuum Filtered and Chemically Reduced Graphene Oxide Siti Nadiah Che Azmi; Shaharin Fadzli Abd Rahman; Abdul Manaf Hashim
Indonesian Journal of Electrical Engineering and Computer Science Vol 10, No 3: June 2018
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.11591/ijeecs.v10.i3.pp897-904

Abstract

This paper presents fabrication of reduced graphene oxide (rGO)/silicon (Si) back-to-back Schottky diode (BBSD) through graphene oxide (GO) thin film formation by vacuum filtration and chemical reduction of the film via ascorbic acid. In order to understand and assess the viability of these two processes, process condition and parameters were varied and analyzed. It was confirmed that the GO film thickness could be controlled by changing GO dispersion volume and concentration. Filtration of 200 ml of 0.4 ppm GO dispersion produced average film thickness of 53 nm. As for the reduction process, long duration was required to produce higher reduction degree. rGO film that underwent two times reduction at before and after transfer process with concentrated ascorbic acid gave the lowest sheet resistance of 3.58 MΩ/sq. In the final part of the paper, result of the BBSD device fabrication and current-voltage characterization were shown. The formed two rGO/Si Schottky junctions in the BBSD gave barrier height of 0.63 and 0.7 eV. The presented results confirmed the viability of fabricating rGO-based device using a simple method and without requirement of sophisticated equipment.
Synthesis of Germanium Dioxide Microclusters on Silicon Substrate in Non-aqueous Solution by Electrochemical Deposition Mastura Shafinaz Zainal Abidin; Shahjahan Shahjahan; Abdul Manaf Hashim
Indonesian Journal of Electrical Engineering and Computer Science Vol 6, No 1: April 2017
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.11591/ijeecs.v6.i1.pp193-199

Abstract

We report the formation of crystalline germanium dioxide (GeO2) microclusters on n-Si (100) electrodeposited in non-aqueous electrolyte (a mixture of 5 vol.% germanium tetrachloride (GeCl4) and dipropylene glycol (C6H14O3) ) at current density of 20 mA/cm2 for 200 sec. Pt, C and Ge are used as an anode while Si acts as a cathode. Field- emission scanning electron microscopy (FESEM) images show that the deposited GeO2 microclusters are having rounded-mushroom-shaped particles with the smallest size of 660 nm. Energy dispersive x-ray (EDX) spectra reveal that the particles are only composed of Ge and O elements. Raman spectra confirm the formation of crystalline GeO2 with trigonal bonding structures in all samples. The photoluminescence (PL) spectra show two significant emission peaks in visible range at 2.27 eV and 2.96 eV, which seems to be attributed by GeO2 and Si defects. C6H14O3 seems to contribute to the formation of GeO2 due to its hygroscopic nature. Such microcluster structures shall provide some potential applications for electronic and optical devices on Si platform.
Co-Authors Mastura Shafinaz Zainal Abidin Shaharin Fadzli Abd Rahman Shahjahan Shahjahan Siti Nadiah Che Azmi