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Nasri Bin Sulaiman
Universiti Putra Malaysia

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A self-rectifying memristor model for simulation and ReRAM applications Sinan Sabah; Nasri Bin Sulaiman
Indonesian Journal of Electrical Engineering and Computer Science Vol 19, No 3: September 2020
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.11591/ijeecs.v19.i3.pp1204-1209

Abstract

In this paper, a self-rectifying memristor (SRM) model is proposed for memristive circuit simulations. This model is based on the behavior of voltage controlled, bipolar memristors that exhibit diode-like rectification behavior when reverse biased. Such unique feature can solve the sneak path problem in crossbar memristive memory structures without requiring additional cell selectors. The results show that the proposed model satisfies the basic memristor’s i-v characteristics and fits many different memristor devices adequately. The proposed model is implemented in Verilog-A so that it is conveniently incorporated into various memristor applications with different circuit simulators
Co-Authors Sinan Sabah