Siti Hawa Ruslan
Universiti Tun Hussein Onn Malaysia

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Journal : Indonesian Journal of Electrical Engineering and Computer Science

Low power design of ultra wideband PLL using 90 nm CMOS technology Fadhilah Binti Noor Al Amin; Nabihah Ahmad; Siti Hawa Ruslan
Indonesian Journal of Electrical Engineering and Computer Science Vol 20, No 2: November 2020
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.11591/ijeecs.v20.i2.pp727-735

Abstract

The rapid growth of the electronic system has become one of the challenges in the high performance of very large scale integration (VLSI) design and has contributed to the evolution of phase locked loop (PLL) system design as one of the inevitable and significant necessities in the modern days. This design focus on the development of PLL system that can operate at a high performance within the ultra-wideband (UWB) frequency but consume low power that may be useful for future device implementation in the communication system. All proposed sub modules of PLL is highly suitable for low power and high speed application as each of them consumes overall power consumption around 2 µW until 1 mW with frequency from 3.1 GHz to 10.6 GHz. All the design architecture, schematic, simulation and analysis are implemented using Synopsys Tool in 90 nm CMOS technology. Through the overall analysis, it can be concluded that this proposed sub modules design of the PLL system has better performance compared to previous work in terms of power consumption and frequency.
Comparative study of symmetrical OTA performance in 180 nm, 130 nm and 90 nm CMOS technology Wan Mohammad Ehsan Aiman bin Wan Jusoh; Siti Hawa Ruslan; Nabihah Ahmad; Warsuzarina Mat Jubadi; Rahmat Sanudin
Indonesian Journal of Electrical Engineering and Computer Science Vol 14, No 1: April 2019
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.11591/ijeecs.v14.i1.pp230-240

Abstract

In this paper, the comparative study of symmetrical Operational Transconductance Amplifier (OTA) performance between 180 nm, 130 nm and 90 nm CMOS technology have been done thoroughly to find the relationship between voltage supply and bias current with performance parameters (gain, power consumption and Common-Mode Rejection Ratio (CMRR)). The OTA which adopts symmetrical topology is designed carefully and simulated using Synopsys HSpice software and the results are carefully analyzed and compared. The symmetrical OTA designed in 90 nm CMOS technology is found to be the best because the power consumed is only 9.83 µW from ±0.9 V voltage supply and the OTA achieved 55.9 dB of the DC gain. The CMRR of the symmetrical 90 nm OTA is 140 dB which is sufficient to reject the common-mode signals in electrocardiogram (ECG) input signal. The symmetrical 90 nm OTA is suitable to be implemented as bioamplifier in ECG signal detection system as it consumed low power and has a high CMRR characteristic.