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Spv Subbarao
Sreenidhi Institute of Science & Technology

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Study of Different Parametric Variations of MOSFET Pressure Sensor Shruti Bhargava; Spv Subbarao
Indonesian Journal of Electrical Engineering and Computer Science Vol 10, No 1: April 2018
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.11591/ijeecs.v10.i1.pp19-26

Abstract

There is a growing demand of miniaturization of the electronics world. A brief discussion for simulating and fabrication of the MOSFET based pressure sensor in nanoscale is being reviewed in this paper. Aim of this paper is to collect all the scaling challenges and their solutions together to make understanding the facts of the MOSFET based sensor. As the MOSFET move from micro scale to nanoscale the functioning changes dramatically. The Silicon oxide material fails when scale down to nano region. However, many issues such as electrical quality , thermodynamic stability, Kinetic stability, gate compatibility and process compatibility were being solved in the process of integration and implementation.
Co-Authors Shruti Bhargava