Article Per Year (5 Year)
p-Index From 2021 - 2026
0
P-Index
This Author published in this journals
All Journal Indonesian Journal of Electrical Engineering and Computer Science
B. Bouazza
University of Tlemcen

Published : 1 Documents Claim Missing Document
Claim Missing Document
Check
Articles

Found 1 Documents
Search

 1 
Side Effects in a HEMT Performance with InAlN/GaN Z. Kourdi; B. Bouazza; A. Guen-Bouazza; M. Khaouani
Indonesian Journal of Electrical Engineering and Computer Science Vol 15, No 2: August 2015
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.11591/ijeecs.v15.i2.pp249-258

Abstract

We present a simulation of a HEMT (high electron mobility transistor) structure. We extract the device characteristics through the analysis of DC, AC and high frequency regimes, as shown in this paper. This work demonstrates the optimal device with a gate length of 30 nm, and InAlN/GaN heterostructure for minimizing side effects. The simulated with Silvaco software of the HEMT devices with the materials InAlN show very good scalability in different application. We have demonstrated an excellent current density, as high as 644 mA/mm, a peak extrinsic transconductance of 710 mS/mm at VDS=2 V, and cutting frequency cutoffs of 385 GHZ, maximum frequency of 810 GHz, maximum efficiency of 23% for x-Band, maximum breakdown voltage of 365 V, and an ON/OFF current density ratio higher than 8 x 108. These values were determined through the simulation by hydrodynamics models, which makes that optimize the design is the future of this technology.
Co-Authors A. Guen-Bouazza M. Khaouani Z. Kourdi