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Mursal Mursal
Department of Physics, Syiah Kuala University, Banda Aceh
Astronomy Computer Science & IT Earth & Planetary Sciences Electrical & Electronics Engineering Energy Engineering

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Growth of Amorphous Silicon Germanium (a-SiGe:H) Alloys Thin Film by PECVD Mursal Mursal; A. Supu; I. Usman; T. Winata; Sukirno Sukirno; M. Barmawi
Indonesian Journal of Physics Vol 15 No 2 (2004): Vol. 15 No.2, April 2004
Publisher : Institut Teknologi Bandung

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Abstract

Hydrogenated amorphous silicon-germanium (a-SiGe:H) alloys thin films had been grown by Plasma Enhanced Chemical Vapor Deposition (PECVD) method. The films were grown on corning glass # 7059 from a gas mixture of silane (SiH4) and germane (GeH4) 10% diluted in hydrogen (H2). UV-VIS-NIR spectra analysis of a-SiGe:H alloys thin films showed that the sub-bandgap absorption α(hν) spectra of a-SiGe:H alloys shift to lower photon energy with increasing in GeH4 flow rate. The optical bandgap of a-SiGe:H alloy decreased non linearly from 0.94 eV – 0.75 eV with increasing in GeH4 flow rate from 2.5 sccm – 25 sccm. The photo-sensitivity (σph/σd) of a-SiGe:H thin films were improved as the optical bandgap (Eopt) increased.
Co-Authors A. Supu I. Usman M. Barmawi Sukirno Sukirno T. Winata