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Paulus L. Gareso
Departement of Physics, Faculty of Mathematics and Natural Sciences, Hasanuddin University, Jl. Perintis Kemerdekaan Km 10 Tamalanrea 90245, Makassar
Astronomy Computer Science & IT Earth & Planetary Sciences Electrical & Electronics Engineering Energy Engineering

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A Comparison of Zinc and Carbon Doped on the Atomic Interdiffusion of InGaAs/AlGaAs Quantum Wells Laser Structures After Annealing Paulus L. Gareso
Indonesian Journal of Physics Vol 20 No 2 (2009): Vol. 20 No. 2, April 2009
Publisher : Institut Teknologi Bandung

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (192.656 KB) | DOI: 10.5614/itb.ijp.2009.20.2.1

Abstract

We have compared a zinc and a carbon doped on the atomic interdiffusion of InGaAs/AlGaAs after annealing using Electrochemical capacitance voltage (EC-V), X-ray diffraction and photoluminescence (PL) measurements. Electrochemical capacitance voltage measurements revealed that the carrier concentration in the Zn-doped p++GaAs contact layers decreased after annealing at 900oC for 60 sec, indicating that some of the Zn acceptors were passivated or outdiffused from the surface. In contrast to the C-doped samples, an increase of carrier concentration was observed after annealing. X-ray rocking curve confirmed this result where the amount of lattice contraction increase after annealing which is attributed to the presence of the substitutional carbon CAs. Photoluminescence results showed that a large energy shift was observed in the Zn-doped samples compare with C- doped samples. Photoluminescence measurements after etching to various depth showed similar luminescence defects in both Zn- and C-doped samples. Photocurrent measurements showed the quality of quantum well was improve after annealing in C-doped samples due to activation of carbon doped.
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