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Mikrajuddin Abdullah
Physics of Electronic Materials Research Division, Institut Teknologi Bandung Jalan Ganesa 10, Bandung, Indonesia
Astronomy Computer Science & IT Earth & Planetary Sciences Electrical & Electronics Engineering Energy Engineering

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Simulation of Electron Transmittance and Tunneling Current in a Metal-Oxide- Semiconductor Capacitor with a High-K Dielectric Stack of HfO2 and SiO2 Using Exponential- and Airy-Wavefunction Approaches and a Transfer Matrix Method Khairurrijal Khairurrijal; Fatimah A. Noor; Mikrajuddin Abdullah; Sukirno Sukirno
Indonesian Journal of Physics Vol 20 No 2 (2009): Vol. 20 No. 2, April 2009
Publisher : Institut Teknologi Bandung

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (176.049 KB) | DOI: 10.5614/itb.ijp.2009.20.2.2

Abstract

Analytical expressions of electron transmittance and tunneling current in a metal-oxide-semiconductor (MOS) capacitor with a high dielectric constant (high-K) oxide stack of HfO2 and SiO2 and a negative bias applied to the metal gate were derived. Exponential- and Airy-wavefunction approaches were employed in deriving analytically the electron transmittance and tunneling current. A numerical approach based on a transfer matrix method was used as a standard to evaluate the analytical approaches. It was found that the transmittances obtained under the exponential- and Airy-wavefunction approaches and the TMM are matching for low electron energies, while for higher energies only the transmittances calculated by employing the Airy- wavefunction approach is the same as those computed by using the TMM. It was also found that the tunneling currents calculated by using the exponential- and the Airy-wavefunction approaches and the TMM are equal for low oxide voltages (lower than 0.5 V), while for higher oxide voltages only the tunneling currents computed under the Airy-wavefunction approach fit those obtained under the TMM. Therefore, the Airy-wavefunction approach provides a better analytical model to tunneling processes in the MOS capacitor.
Co-Authors Fatimah A. Noor Khairurrijal Khairurrijal Sukirno Sukirno