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Wahyu Widanarto
Department of Physics, Jenderal Soedirman University, Jl. Dr. Soeparno 61,53123 Purwokerto, Indonesia
Astronomy Computer Science & IT Earth & Planetary Sciences Electrical & Electronics Engineering Energy Engineering

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Effect of Annealed Si/Ti/Pt Hetero Structure on The Response Time and Signals of Hydrogen Sensors Wahyu Widanarto; Farzand Abdullatif; Christoph Senft; Walter Hansch
Indonesian Journal of Physics Vol 22 No 1 (2011): Vol. 22 No. 1, January 2011
Publisher : Institut Teknologi Bandung

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (765.052 KB) | DOI: 10.5614/itb.ijp.2011.22.1.3

Abstract

Titanium (Ti) and platinum (Pt) films deposited on p-doped Si electrode were incorporated as gas sensitive electrodes in Kelvin and Floating Gate Field Effect Transistor (FG-FET) systems. The films were annealed in oxygen at 800°C. SEM and EDX characterization methods were employed to study the surface of these films. Work function changes with respect to various hydrogen concentrations have been measured as a function of temperature and humidity. The results show that nano grains of titanium silicide (TiSi2) and Pt islands are formed after the annealing. Annealed TiSi2/Pt films are well suitable to significantly stabilize FG-FET based hydrogen sensor. The sensors can detect H2 in concentration range between 0.3% and 2% from room temperature up to 135°C. The response time is quite fast i.e. t90 ~ 43.2 seconds. An experiment on the stability has proved that signal pattern of the sensors remained stable one month after first conditioning.
Co-Authors Christoph Senft Farzand Abdullatif Walter Hansch