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All Journal International Journal of Reconfigurable and Embedded Systems (IJRES)
Didigam Anitha
GITAM University
Economics, Econometrics & Finance

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Ultra-low leakage static random access memory design Didigam Anitha; Mohd. Masood Ahmad
International Journal of Reconfigurable and Embedded Systems (IJRES) Vol 12, No 1: March 2023
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.11591/ijres.v12.i1.pp60-69

Abstract

An ultra-low leakage static random-access memory (SRAM) cell structure with 8 transistors is proposed in this paper. Compared to the 6T SRAM and other existing 8T SRAM cells, leakage power of the proposed cell in hold mode reduced significantly. The stability parameters of the proposed cell are calculated using butterfly method and also N-curve method. Proposed SRAM achieves better write margin with slightly less read margin than 6T SRAM. Proposed technique consumes 790 PW of power in hold mode, which is very less compared to other existing techniques. Therefore, the proposed cell is appropriate for hold mode applications. The simulations are carried out by using Cadence (Virtuoso Schematic and layout editor) tools with GPDK45-nm technology.
Co-Authors Mohd. Masood Ahmad