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All Journal International Journal of Power Electronics and Drive Systems (IJPEDS) Bulletin of Electrical Engineering and Informatics
Phan Xuan Le
Industrial University of Ho Chi Minh City
Control & Systems Engineering Electrical & Electronics Engineering

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The use of CaO:Eu3+ and Zn2SiO4:Mn2+ phosphors to increase the color quality and illumination intensity of WLEDs Ha Thanh Tung; Dieu An Nguyen Thi; Phan Xuan Le
Bulletin of Electrical Engineering and Informatics Vol 12, No 6: December 2023
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.11591/eei.v12i6.4754

Abstract

The lumen efficacy in remote phosphor structure displayed remarkable enhancements, which is notable for the development of white light-emitting diodes (WLEDs). Nevertheless, its quality of colour is deemed not as good as that of the conformal or in-cup phosphor structure. Therefore, the goal of this research is to achieve a better quality of colour and significant luminous flux value for remote phosphor configuration by using extra phosphor layers. In particular, the two-layer and three-layer structures with the implementation of green and red phosphors are proposed. Comparing these two structures can help pinpoint the best suited for the WLED production. The assessment of each structure’s effect on the WLEDs’ optical parameters was determined under various correlated temperatures of colour (5,600-8,500 K). The outcomes indicated that the three-layer structure enhanced the quality of colour with greater efficiency compared to the two-layer structure due to the increased color rendering index (CRI), color quality scale (CQS), and photoluminescence (PL), and reduced colour deviation. The scattering improvement of the three-layer structure is a key factor of these accomplishments, proven by the scattering theory of Mie. Therefore, the three-layer structure is potential for developing WLED production.
Enhancing scattering strength improvement and color uniformity in white light-emitting diodes using high concentration of cobalt(II) oxide Tung Vo Thanh; Phan Xuan Le; Nguyen Doan Quoc Anh
International Journal of Power Electronics and Drive Systems (IJPEDS) Vol 17, No 3: September 2026
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.11591/ijpeds.v17.i3.pp1974-1981

Abstract

The study herein investigates the structural development of cobalt(II) oxide (CoO) thin films grown on Ag (0 0 1) substrates and evaluates their impact on optical performance in white light-emitting diodes (WLEDs). The structural and chemical properties of CoO films were characterized using grazing-incidence X-ray diffraction (GIXD), Xray photoelectronic spectroscopic (XPS), as well as low-power electronic diffracting (LEED). The outcomes reveal that CoO films initially grow pseudomorphically up to 3-4 monolayers, followed by gradual relaxation toward the bulk lattice parameter. A periodic mismatch dislocation network forms at approximately 8 monolayers, leading to lattice tilting and the formation of ordered nanoscale domains. In addition, the incorporation of CoO as a scattering material in WLEDs significantly improves light scattering and color uniformity, while maintaining stable luminous performance. Compared with conventional scattering materials, CoO demonstrates lower scattering loss and reduced chromatic deviation, making it a promising candidate for high-precision optoelectronic applications.
Co-Authors Dieu An Nguyen Thi Ha Thanh Tung Nguyen Doan Quoc Anh Tung Vo Thanh