Article Per Year (5 Year)
p-Index From 2021 - 2026
0.23
P-Index
This Author published in this journals
All Journal Journal of Sciencce Technology and Visual Culture
Sabar Sabar
Teknik Elektro Institut Teknologi Sumatera
Arts Chemical Engineering, Chemistry & Bioengineering Civil Engineering, Building, Construction & Architecture Control & Systems Engineering Engineering

Published : 1 Documents Claim Missing Document
Claim Missing Document
Check
Articles

Found 1 Documents
Search

 1 
Studi Distribusi Elektron pada Semikonduktor Tipe N dan P sebagai Penyusun Transistor Duwi Hariyanto; Kisna Pertiwi; Sabar Sabar
Journal of Science, Technology, and Visual Culture Vol 1 No 1 (2021): Juli 2021
Publisher : Jurusan Teknologi Produksi dan Industri, Institut Teknologi Sumatera

Show Abstract | Download Original | Original Source | Check in Google Scholar

Abstract

The materials used in the production of transistors are N-type and P-type semiconductors. The characteristics of these materials can be determined from the state of the electrons (carriers) in the energy band. Electrons in semiconductors are fermions, so the probability of an electron's state in the energy band is determined by the Fermi-Dirac distribution. The aimed of the study is to examine the distribution of electrons in N-type and P-type semiconductors as transistor materials using simple calculations. The Microsoft Excel software was used to calculate the Fermi-Dirac distribution and the Fermi level. The results of the calculations have a good agreement with the state of the electron and deviations from the Fermi level due to increasing temperature.
Co-Authors Duwi Hariyanto Kisna Pertiwi