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Munisa, Lusitra
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STUDI KARAKTERISASI OPTIS LAPISAN TIPIS a-SiC:H HASIL DEPOSISI METODE GLOWDISCHARGE Saleh, Rosari; Munisa, Lusitra; Marianty, Dewi
Makara Journal of Science Vol. 7, No. 3
Publisher : UI Scholars Hub

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Optical Properties of a-SiC:H Films Deposited by Glowdischarge Methods. The optical properties of amorphous silicon carbon films deposited by glowdischarge method have been studied using ultra violet-visible (uv-vis) spectroscopy. The refractive index was calculated by Swanepoel’s formula using transmission data then followed by numerical simulation. The films density tends to decrease with increasing carbon content. The widening of the optical gap by increasing carbon content indicates the enhancement of film’s transparence. Both real and imaginary parts of the dielectric constant show variation in magnitude as the carbon content increase
PENGARUH ANIL TERMAL TERHADAP BESARAN OPTIS LAPISAN TIPIS a-SiC:H HASIL METODE DC SPUTTERING II. TARGET GRAFIT Saleh, Rosari; Munisa, Lusitra; Marianty, Dewi
Makara Journal of Science Vol. 7, No. 1
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The Effect of Thermal Annealing on the Optical Properties of a-SiC:H Films Produced by DC Sputtering Methods: I. Graphite Target Case. A study of the annealing effect on optical properties and disorder of hydrogenated amorphous silicon carbon (a-SiC:H) films was undertaken. The films were prepared by sputtering technique using graphite target and silicon wafer in argon and hydrogen gas mixture, and then characterized by uv-vis (ultra violet-visible) spectroscopy before and after annealing. Index of refraction n and absorption coefficient α of films have been determined from measurements of transmittance. The optical gap show small variation with annealing temperature, increasing with increasing annealing temperature up to 500 °C. An increase of annealing temperature leads to reduced film density and the amorphous network disorder. The experimental results are discussed in terms of deposition condition and compared to other experimental results.
PENGARUH ANIL TERMAL TERHADAP BESARAN OPTIS LAPISAN TIPIS a-SiC:H HASIL METODE DC SPUTTERING I. TARGET SILIKON Saleh, Rosari; Munisa, Lusitra; Marianty, Dewi
Makara Journal of Science Vol. 7, No. 1
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The Effect of Thermal Annealing on the Optical Properties of a-SiC:H Films Produced by DC Sputtering Methods: I. Silicon Target Case. The effects of thermal annealing treatment on the optical properties of amorphous silicon carbon films deposited by silicon target in an argon, methane and hydrogen gas mixture have been studied using ultra violet-visible (uv-vis) spectroscopy. Both n and α, and consequently the real and imaginary parts of the dielectric constant, show a considerable variation with subsequent annealing up to annealing temperature 500 °C, with the most rapid changes occurring for temperature 300 °C. The films tend denser as the annealing temperature increased up to 500 °C. The optical gap improved slightly upon annealing, where as the disorder of the amorphous network reduced. The annealing treatment produces reorganization of the amorphous network since thermal annealing results in dissociation of hydrogenated bonds (Si-H and C-H).
PENGARUH PENINGKATAN FLOW RATE GAS METAN TERHADAP SIFAT OPTIS LAPISAN TIPIS AMORF SILIKON KARBON (a-SiC:H) HASIL DEPOSISI METODE DC SPUTTERING Munisa, Lusitra; Saleh, Rosari
Makara Journal of Science Vol. 6, No. 1
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Methane Flow Rate Effects On The Optical Properties of Amorphous Silicon Carbon (a-SiC:H) Films Deposited By DC Sputtering Methods. We have investigated the refractive index (n) and the optical absorption coeffi cient (α) from refl ection and transmission measurements on hydrogenated amorphous silicon carbon (a-SiC:H) fi lms. The a-SiC:H fi lms were prepared by dc sputtering method using silicon target in argon and methane gas mixtures. The refractive index (n) decreases as the methane fl ow rate increase. The optical absorption coeffi cient (α) shifts to higher energy with increasing methane fl ow rate. At higher methane fl ow rate, the fi lms tend to be more disorder and have wider optical gap. The relation of the optical properties and the disorder amorphous network with the compositional properties will be discussed.
PENENTUAN KONSTANTA OPTIS DI DAERAH ABSORPSI FUNDAMENTAL MENGGUNAKAN FORMULASI FOROUHI DAN BLOOMER UNTUK LAPISAN TIPIS AMORF SILIKON KARBON (a-SiC:H) Saleh, Rosari; Munisa, Lusitra; Marianty, Dewi
Makara Journal of Science Vol. 6, No. 2
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An expression of the imaginary and real parts of the complex refractive index derived by Forouhi and Bloomer have been applied to obtain wider energy range of optical constants for amorphous silicon carbon (a-SiC:H) films deposited by dc sputtering method using silicon and graphite targets. Excellent agreement was obtained between the formula and experimentally measured values of both n(E) and k(E). The optical constants obey Kramers-Kronig dispersion relation and show a maximum at high-energy range. The dependence of five parameters to carbon concentration and the variation of optical constants with composition for both targets will be discussed.
STUDI DISORDER LAPISAN TIPIS AMORF SILIKON KARBON (a-SiC:H) HASIL DEPOSISI METODE DC SPUTTERING Munisa, Lusitra; Saleh, Rosari
Makara Journal of Science Vol. 6, No. 2
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Disorder Study of Amorphous Silicon Carbon (a-SiC:H) Films Deposited by DC Sputtering Method. Disorder amorphous network of amorphous silicon carbon (a-SiC:H) films has been investigated for films prepared by dc sputtering method. The films were deposited using silicon target in argon and methane gas mixtures. The optical absorption coefficients have been performed by UV-VIS (ultra violet-visible) reflectance and transmittance spectroscopy. Disorder parameter has been obtained from the optical absorption coefficient α (E) using Tauc plot. Increasing methane flow rate has an effect on increasing Tauc gap and decreasing disorder parameter. The amorphous network of the films tends to be more disorder with increasing methane flow rate. The relation of disorder amorphous network with structural and compositional properties will be discussed.
Co-Authors Marianty, Dewi Rosari Saleh