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Journal : MASALIQ: Jurnal Pendidikan dan Sains

Pengaruh Penambahan Doping Cerium terhadap Nilai Bandgap CuO dengan Metode Sol-Gel Dwiputri, Yumanda; Sanjaya, Hary; Patriela, Miftah
MASALIQ Vol 5 No 2 (2025): MARET
Publisher : Lembaga Yasin AlSys

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.58578/masaliq.v5i2.4873

Abstract

Copper(II) oxide (CuO) has been recognized as a promising semiconductor material for various applications, such as photocatalysis, sensors, and renewable energy devices. However, its efficiency is often limited by a suboptimal bandgap value. This study aims to analyze the effect of cerium doping on the properties of CuO nanoparticles synthesized through the sol-gel process. The sol-gel method ensures a homogeneous doping distribution and produces nanoparticles with a stable structure. The bandgap energy of CuO nanoparticles was determined through characterization using UV-DRS. Cerium was introduced as a dopant in CuO at a concentration of 0.4 mmol, resulting in a bandgap value of 1.26 eV, whereas undoped CuO exhibited a bandgap of 1.35 eV. The analysis indicates that the Ce doping concentration significantly affects the bandgap of CuO nanoparticles, with a reduction observed at 0.4 mmol compared to undoped CuO. This decrease is attributed to symmetry disruption caused by doping, including oxygen vacancies, structural defects, and the presence of impurities that create additional energy levels within the bandgap. Furthermore, uniform microstrain and a smaller particle size contribute to structural disturbances that also influence the bandgap.
Pengaruh Penambahan Doping Vanadium terhadap Nanopartikel SnO₂ Menggunakan Metode Sol-Gel Amsyar, Nadhilah; Sanjaya, Hary; Patriela, Miftah
MASALIQ Vol 5 No 2 (2025): MARET
Publisher : Lembaga Yasin AlSys

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.58578/masaliq.v5i2.5112

Abstract

Semiconductors are materials used to conduct electricity for a certain period of time. SnO2 is an n-type semiconductor that has a wide band gap and is most widely used in technology such as solar cells, batteries, and catalysts. This study aims to analyze the effect of vanadium doping on the properties of SnO2 nanoparticles using the sol-gel method. The sol-gel method can produce a stable vanadium-doped SnO2 surface and has a high surface area. Determination of the band gap energy value in SnO2 was carried out by characterization using UV-DRS. The results of SnO2 doped with vanadium obtained the optimum bandgap value at the addition of vanadium with a concentration of 0.25 mmol, which is 2.25 eV and SnO2 without the addition of vanadium doping has a bandgap value of 3.41 eV. This shows that the addition of vanadium doping can affect the bandgap value of SnO2 nanoparticles. This decrease in the bandgap value is caused by the interaction between the electron band and the delocalization of electrons in the transition ions causing metal ion substitution, which results in a decrease in the bandgap value.
Pengaruh Konsentrasi Doping TiO₂ dan Volume Diethanolamine (DEA) terhadap Nilai Bandgap CuO dengan Metode Sol-Gel Fatma, Sakina Cahaya; Sanjaya, Hary; Patriela, Miftah
MASALIQ Vol 5 No 4 (2025): JULI
Publisher : Lembaga Yasin AlSys

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.58578/masaliq.v5i4.6634

Abstract

Copper(II) oxide (CuO) is a promising semiconductor material for various applications such as photocatalysis, sensing, and renewable energy devices. However, its performance is often limited by a suboptimal bandgap value for efficient energy conversion. This study aims to evaluate the effects of titanium doping concentration and the addition volume of diethanolamine (DEA) on the optical properties of CuO synthesized via the sol-gel method. The sol-gel technique was chosen for its ability to produce uniform doping distribution and stable nanoparticle structures. Bandgap characterization was conducted using UV-DRS spectroscopy. The results show that the bandgap of pure CuO, initially measured at 1.36 eV, was reduced to 1.28 eV through titanium doping at an optimal concentration of 0.3 mmol. The further addition of DEA at an optimal volume of 1 mL lowered the bandgap to 1.22 eV. This reduction indicates that titanium doping and DEA addition significantly influence the optical properties of CuO. These effects are likely due to structural irregularities such as oxygen vacancies, crystal defects, and impurities, which contribute to modifications in the material’s electronic structure. Additionally, the uniform distribution of microstrain and smaller particle size further contribute to structural alterations and bandgap tuning.