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All Journal International Journal of Electrical and Computer Engineering International Journal of Power Electronics and Drive Systems (IJPEDS)
Kerai, Salim
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Computer Science & IT Control & Systems Engineering Electrical & Electronics Engineering

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The optimization of a GaN-based current aperture vertical electron transistor Hadjem, Dalila; Kourdi, Zakarya; Kerai, Salim
International Journal of Power Electronics and Drive Systems (IJPEDS) Vol 15, No 2: June 2024
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.11591/ijpeds.v15.i2.pp651-658

Abstract

The main objective of this paper is to simulate and optimize a current aperture vertical electron transistor (CAVET) based on gallium nitride (GaN), which combines both a two-dimensional electron gas (2DEG) and a vertical structure using the SILVACO-TCAD simulator. The dimensions of the structure were reduced by 45% to minimize the size and improve the performances of the proposed device; also, a part of aluminum nitride (AlN)was added to the current blocking layer (CBL) to modulate the conduction band profile. The results obtained from the simulation of our structure demonstrated a maximum drain current of 1.8 A/mm, Pinch-off voltage (VP) of -6 V, drain induced barrier lowering (DIBL) of 166 mV/V, maximum transconductance (gm) of 570 mS/mm, gate-leakage of 7.10-7 A, cut-off frequency (ft) of 200 GHz, maximum oscillation frequency (fMax) of 400 GHz. The proposed device exhibited outstanding performance while consuming low power, making it well-suited for use as a low-noise amplifier (LNA) in satellite reception applications.
Influence of doping concentration on the performances of multi-junction solar cell InGaP/InGaAs/Ge Djeriouat, Khadidja; Kerai, Salim; Ghaffour, Kheireddine
International Journal of Electrical and Computer Engineering (IJECE) Vol 16, No 2: April 2026
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.11591/ijece.v16i2.pp619-628

Abstract

Recently, because of the high costs of experimentation, researchers have turned to simulation. This type of simulation makes it possible to determine, at any point in the volume of a component, the densities of carriers, electrons and holes, the energies, the recombination rates, the electric fields and other parameters that can be deduced from it, such as currents and voltages. Our paper presents the simulation results of the heterojunction solar cell made of GaInP/GaInAs/Ge materials using Silvaco's Atlas software to optimize its electrical efficiency by acting on the doping of photoactive layers. We have chosen a tandem structure when the top cell is constructed by Ga0.4In0.6P, in the middle cell, we used Ga0.1In0.9As and the bottom cell is formed by germanium (Ge). The simulation is performed under the following conditions: 1-sun (0.1 w/cm2), AM1.5G illumination and at temperature 300 K. We obtained an efficiency of 24.65%.
Co-Authors Djeriouat, Khadidja Ghaffour, Kheireddine Hadjem, Dalila Kourdi, Zakarya