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Study Some Properties of Solar Cell Fabricated by Deposited Cadmium Oxide on Pours Silicon in Three Different Temperatures Mahdi, Raghad R.; Maki, Samier A.; AL Salihi, Hind A.; Abood, Marwa K.; Halbos, Raghad J.; Hassan, Ruqia Abdulhussien; Fayad, M. A.
Journal of Fuzzy Systems and Control Vol. 2 No. 2 (2024): Vol. 2, No. 2, 2024
Publisher : Peneliti Teknologi Teknik Indonesia

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.59247/jfsc.v2i2.179

Abstract

In this research cadmium oxide were prepared by using the chemical simple method, and a pours silicon has been fabricate by using the etching technique on the regular silicon, a solar cell is fabricated by deposited the cdo on the prepared pours silicon (Cdo/Psi) by the drop casting method and do the annealing process in three deferent temperatures (200,400,600) c˚. The XRD testes show that all the prepared samples are poly crystalline and cubic with orientations peaks (111,101,100,102). The optical testes show that these thin films have a high absorbency and low transmittance decrease with increasing the annealing temperature. The short circuit current (Isc) and the short circuit voltage (Vsc) of the fabricated solar cell showed that the conversion efficiency increase as the annealing process temperature increase until it become (9.3)% at (600)c˚.
A Study of In2O3 Nano Particles for Gas Sensor Application Halbos, Raghad J.; Al-Algawi, Sariya; Rasheed, Rashed T.; Hassan, Ruqia Abdulhussien; Mahdi, Raghad R.; Azeez, Hasanain; Fayad, M. A.
Journal of Fuzzy Systems and Control Vol. 2 No. 3 (2024): Vol. 2, No. 3, 2024
Publisher : Peneliti Teknologi Teknik Indonesia

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.59247/jfsc.v2i3.217

Abstract

In this research, the sol-gel technique was used to prepare indium oxide nanoparticles. In addition, these particles are deposited by (dip coating technique) on a quartz substrate. Several measurement instruments (FTIR, SEM, UV-visible, and X-RAY diffraction) were used in this study to diagnose and analyze the properties of indium oxide (In2O3) particles at different parameters. The results from XRD indicated that the particle formation converted to a polycrystalline phase at different annealing temperatures (200 ℃ and 600 ℃) for an hour and a half. Also, the XRD results show an increase in the (grain size and lattice constant) with increased annealing temperature. The measurements of the Hall Effect showed the type of conductivity of (In2O3) particles is N-type, carrier concentration, mobility, and resistivity. The results of the sensitivity of indium oxide thin films to toxic gas, specifically carbon monoxide (CO) gas, showed an increase in the sensitivity of thin films annealed at high temperatures.