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All Journal International Journal of Power Electronics and Drive Systems (IJPEDS) Indonesian Journal of Electrical Engineering and Computer Science
Ramavath, Muneeshwar
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Control & Systems Engineering Electrical & Electronics Engineering

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Lifetime (Bx) improvement of PV inverter using Si-SiC H-IGBT/Diode: a reliability approach Ramavath, Muneeshwar; Puvvula Venkata, Rama Krishna
Indonesian Journal of Electrical Engineering and Computer Science Vol 35, No 2: August 2024
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.11591/ijeecs.v35.i2.pp704-710

Abstract

Technological advancements have made it possible to harness the power of renewable energy sources. The efficiency of power electronic devices has increased to almost 98%. In order to reduce the risks of failure and maintain the operation of photovoltaic (PV)-based energy converters, reliable devices are needed. Due to the increasing number of wide-bandgap silicon in electronic converters, the need for more efficient and reliable devices has become more prevalent. However, the cost of these devices is a major issue. Hence, in this work extensive analysis of hybrid silicon (Si)-IGBT and silicon carbide (SiC) antiparallel Diode (H-IGBT/Diode) based PV inverter is proposed to improve the lifetime (Bx). A reliability oriented lifetime assessment is performed on a test case of single stage three kilowatt photovoltaic inverter with 600 V/30 A hybrid switch. Long term mission profile for one year is considered for evaluation at B. V. Raju Institute of Technology (BVRIT), Telangana, India. Finally, B10 lifetime is calculated, comparison analysis is presented between conventional Si-IGBT and proposed Si-SiC H-IGBT/Diode. The results of the study revealed that the H-IGBT exhibited a significant increase in PV inverter reliability.
Comparative reliability and performance analysis of PV inverters with bifacial and monofacial panels Ramavath, Muneeshwar; Venkata, Rama Krishna Puvvula
International Journal of Power Electronics and Drive Systems (IJPEDS) Vol 16, No 3: September 2025
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.11591/ijpeds.v16.i3.pp1970-1982

Abstract

In the realm of solar energy systems, the reliability and performance of photovoltaic (PV) inverters play a critical role in ensuring efficient energy conversion and long-term operation. This study delves into a comprehensive reliability-oriented performance assessment of PV inverters, with a particular focus on the comparative analysis between bifacial and monofacial panels. Reliability evaluation is carried out by considering a yearly mission profile with a one-minute sample at Hyderabad, India. A test case of a 3-kW PV system for grid-connected applications is considered. By integrating reliability metrics with performance indicators, we aim to provide a holistic evaluation of PV inverters operating under varying conditions inherent to both panel types. The research methodology involves detailed simulations and field data analysis to capture the nuances of inverter performance influenced by the unique characteristics of bifacial panels, such as their ability to capture light from both sides, compared to the traditional monofacial panels. In this paper, performance parameters such as junction temperature, MCS, and B10 lifetime (system level (SL) and component level (CL)) are evaluated. Key findings highlight the impact of these differences on inverter reliability. The Bi-PV panel exhibits a decreasing trend. In India, CL reliability (B10) is decreased from 34 years to 1.5 years, and SL reliability (B10) is decreased from 24 years to 1 year. In comparison with monofacial panels, the thermal stress on the PV inverter due to the bifacial panel is increased, and reliability is decreased.
Co-Authors Puvvula Venkata, Rama Krishna Venkata, Rama Krishna Puvvula