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Journal : Kinetik: Game Technology, Information System, Computer Network, Computing, Electronics, and Control

Effects of Process Variations in a HCMOS IC using a Monte Carlo SPICE Simulation Widianto, Widianto; Syafaah, Lailis; Nurhadi, Nurhadi
Kinetik: Game Technology, Information System, Computer Network, Computing, Electronics, and Control Vol 3, No 1, February-2018
Publisher : Universitas Muhammadiyah Malang

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (452.746 KB) | DOI: 10.22219/kinetik.v3i1.437

Abstract

In this paper, effects of process variations in a HCMOS (High-Speed Complementary Metal Oxide Semiconductor) IC (Integrated Circuit) are examined using a Monte Carlo SPICE (Simulation Program with Integrated Circuit Emphasis) simulation. The variations of the IC are L and VTO variations. An evaluation method is used to evaluate the effects of the variations by modeling it using a normal (Gaussian) distribution. The simulation results show that the IC may be detected as a defective IC caused by the variations based on large supply currents flow to it. 
Effects of Process Variations in a HCMOS IC using a Monte Carlo SPICE Simulation Widianto Widianto; Lailis Syafaah; Nurhadi Nurhadi
Kinetik: Game Technology, Information System, Computer Network, Computing, Electronics, and Control Vol 3, No 1, February-2018
Publisher : Universitas Muhammadiyah Malang

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (452.746 KB) | DOI: 10.22219/kinetik.v3i1.437

Abstract

In this paper, effects of process variations in a HCMOS (High-Speed Complementary Metal Oxide Semiconductor) IC (Integrated Circuit) are examined using a Monte Carlo SPICE (Simulation Program with Integrated Circuit Emphasis) simulation. The variations of the IC are L and VTO variations. An evaluation method is used to evaluate the effects of the variations by modeling it using a normal (Gaussian) distribution. The simulation results show that the IC may be detected as a defective IC caused by the variations based on large supply currents flow to it.