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Green Synthesis Ag Nanopartikel Berbasis Moringa Oleifera untuk Meningkatkan Absorbansi Pewarna Organik D205 pada Elektroda ZnO Nanorod Nurhamidah, Millah; Pujiarti, Herlin; Ma'arifah, Alfiatul; Diningsih, Ridha
Gravity : Jurnal Ilmiah Penelitian dan Pembelajaran Fisika Vol 11, No 1 (2025)
Publisher : Universitas Sultan Ageng Tirtayasa

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.30870/gravity.v11i1.29430

Abstract

Green synthesis of AgNPs using Moringa Oleifera extract has many advantages, including low toxicity, relatively low cost, environmentally friendly materials, and the availability of easily obtainable materials. AgNPs also have the advantage of enhancing light absorption in the visible region due to the occurrence of an optical phenomenon known as Localized Surface Plasmon Resonance (LSPR). In this study, AgNPs were composited with the organic dye D205 to examine the effect of AgNPs composites on the increased absorbance of the organic dye D205 on ZnO nanorod electrodes and its influence on the material's band gap. The method used in this research is the green synthesis of AgNPs by reducing Moringa Oleifera extract with the reducer AgNO3, which produces AgNPs powder. Then, in this study, ZnO nanorod electrodes were synthesized using the hydrothermal method. After that, the ZnO nanorod electrode was immersed with the organic dye D205, which was composited with AgNPs. The variation in this study lies in the variation of AgNPs composites at 0 wt% and 10 wt%. Sample characterization was performed using XRD, SEM, and UV-Vis. This study shows that the crystal size of AgNPs is 34 nm, and the maximum diffraction peak is at 2θ = 32.16˚ on the hkl (122) plane. The SEM results show an average diameter of AgNPs of 85 nm, with EDX indicating an atomic weight of Ag compound of 79%. The absorbance values in this study from the variations of AgNPs composites and organic dyes at 0 wt% and 10 wt% were 321 nm and 325 nm, respectively. The Band gap values of the AgNPs and organic dye composite variations at 0 wt% and 10 wt% are 3.69 eV and 2.99 eV, respectively. The research results show that the AgNPs composite with the organic dye D205 successfully increased absorbance and reduced the material's band gap by about 0.7 eV. Thus, the AgNPs composite with the organic dye D205 has the potential to improve efficiency in ZnO nanorod-based DSSC applications.
THE EFFECT OF SPUTTERING TEMPERATURE OF TiO2/ITO-PEN PHOTOANODES IN DYE SENSITIZED SOLAR CELL Ma'arifah, Alfiatul; Sholeha, Nabella; Nurhamidah, Millah; Diningsih, Ridha; Pujiarti, Herlin
Jurnal Neutrino:Jurnal Fisika dan Aplikasinya Vol 17, No 1 (2024): October
Publisher : Universitas Islam Negeri Maulana Malik Ibrahim Malang

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.18860/neu.v17i1.29404

Abstract

Currently, the world is facing a major crisis related to the lack of sustainable, safe, and environmentally friendly energy resources. Dye sensitized solar cells (DSSC), another name for third-generation solar cells, have gained a lot of interest due to ease of production, cheapness, and environmental friendliness. The photoanode is among DSSC's most crucial components. In this research, the active layer on the TiO2 photoanode was optimized to improve the efficiency of the DSSC. The active layer was deposited using Radio Frequency (RF) magnetron sputtering on an Indium tin oxide-polyethylene naphthalate (ITO-PEN) substrate. The sputtering temperature was varied to 25, 80, 120, and 160℃ for one hour. The thin film TiO2/ITO-PEN photoanode will be characterized by means of X-ray Diffraction (XRD), Ultraviolet-Visible (UV-Vis) spectroscopy, and solar simulator. The XRD analysis shows that the best crystal size is 14.55 nm for a sputtering temperature of 80℃. According to the UV-Vis data, optical absorption increases with increasing sputtering temperature. The wavelength range where the absorption peak occurs is 252–465 nm, and the smallest value of the energy gap is found at a sputtering temperature of 25℃ with a value of 3.02 eV. For the TiO2/ITO-PEN thin layer, the maximum efficiency was achieved at 0.12% at a sputtering temperature of 25°C.