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Y. Hanna, Muhammad
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Control & Systems Engineering Electrical & Electronics Engineering Energy Materials Science & Nanotechnology Physics

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The Effect of Biaxial Strain on The Thermoelectric Properties of 2D SiBi Anshory, Muhammad; Y. Hanna, Muhammad
Journal of Energy, Material, and Instrumentation Technology Vol 6 No 4 (2025): Journal of Energy, Material, and Instrumentation Technology (In Press)
Publisher : Departement of Physics, Faculty of Mathematics and Natural Sciences, University of Lampung

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.23960/jemit.v6i2.296

Abstract

This study investigates the electronic and thermoelectric properties of two-dimensional silicon bismuth (2D SiBi) using first-principles Density Functional Theory (DFT) calculations. The 2D SiBi monolayer is identified as a semiconductor with an indirect band gap of 0.67 eV. Solving the Boltzmann transport equation reveals outstanding thermoelectric performance, evidenced by high Seebeck coefficients of 1243.79 µV/K (p-type) and 1217.23 µV/K (n-type) at room temperature. Most significantly, the application of a modest -1% biaxial compressive strain induces a substantial enhancement in these values, elevating them to 1361.75 µV/K and 1371.85 µV/K for p-type and n-type carriers, respectively. These results demonstrate that mechanical strain is an effective strategy for tuning and optimizing the thermoelectric efficiency of 2D SiBi, positioning it as a highly promising material for next-generation thermoelectric devices.
Co-Authors Muhammad Anshory, Muhammad