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All Journal Indonesian Journal of Material Research
Phan Thi Minh Man
Faculty of Electrical and Electronics Engineering, Ton Duc Thang University, Ho Chi Minh City, 70000, Vietnam
Chemical Engineering, Chemistry & Bioengineering Civil Engineering, Building, Construction & Architecture Electrical & Electronics Engineering Energy Engineering

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Photoluminescence Broadening Induced by Internal Electric Field Variations in Polar InGaN/GaN Quantum Wells Nguyen Thi Phuong Loan; Phan Xuan Le; Phan Thi Minh Man
Indonesian Journal of Material Research Vol. 4 No. 3 (2026): Future Issue: November
Publisher : Magister Program of Material Science Graduate School of Universitas Sriwijaya

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.26554/ijmr.20264388

Abstract

This study investigates the influence of internal electric field modulation on photoluminescence (PL) broadening in polar InGaN/GaN quantum wells (QWs). By applying an external bias, the internal electric field is effectively controlled, allowing systematic evaluation of its role in spectral broadening. Photoluminescence and electro-reflectance measurements reveal that reducing the internal electric field leads to a noticeable narrowing of the PL linewidth. A theoretical model is developed to describe the relationship between electric field fluctuations and emission energy variation. The results indicate that stronger internal electric fields enhance the sensitivity of emission energy to local potential fluctuations, thereby increasing PL broadening. Additionally, a reduction in the Huang-Rhys factor is observed under decreased electric field conditions, suggesting weakened exciton-phonon coupling. These findings provide direct experimental evidence of the role of internal electric fields in PL broadening and offer a pathway for spectral control in III-nitride optoelectronic devices.
Structural and Optical Properties of Co-Doped ZnO Nanoparticles Synthesized by the Sol-Gel Method Nguyen Thi Phuong Loan; Lee Hsiao-Yi; Phan Thi Minh Man
Indonesian Journal of Material Research Vol. 4 No. 3 (2026): Future Issue: November
Publisher : Magister Program of Material Science Graduate School of Universitas Sriwijaya

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.26554/ijmr.20264395

Abstract

ZnO is recognized as a wide-bandgap semiconductor (3.37 eV) possessing a relatively huge exciton binding power (~60 meV), which makes it highly attractive for optoelectronic technologies. According to the current study, Co-incorporated ZnO nanoparticles were fabricated through an economical sol-gel synthesis route. The structural and optic characteristics were comprehensively underwent examination using XRD, SEM, and UV-Vis methods. Diffraction results reveal that all synthesized samples retain a pure hexagonal wurtzite phase, with no evidence of secondary phases, confirming effective Co incorporation into the ZnO lattice. As the Co concentration increases, a slight reduction in crystallite size is observed, indicating lattice distortion induced by dopant atoms. SEM analysis shows that the particles are predominantly quasi-spherical with minor agglomeration, and doping does not significantly alter their morphology. From an optical perspective, increasing Co content causes the absorption edge to shift toward longer wavelengths, accompanied by stronger absorption in the visible region. Bandgap values, extracted using Tauc analysis, reduce from 3.18 eV (undoped ZnO) to 2.94 eV at 3 mol% Co, followed by a marginal increase at higher concentrations. This trend is associated with the introduction of impurity-related electronic states within the bandgap. Overall, Co incorporation provides an effective means to modulate the optical response of ZnO nanostructures, thereby enhancing their suitability for advanced optoelectronic applications.
Co-Authors Lee Hsiao-Yi Nguyen Thi Phuong Loan Phan Xuan Le