Optimization of Empirical Modelling of Advanced Highly Strained In0.7Ga0.3As/In0.52Al0.48As pHEMTs for Low Noise Amplifier

W.M. Jubadi (University Tun Hussein Onn Malaysia, Malaysia)
F. Packeer (University Sains Malaysia, Malaysia)
M. Missous (The University of Manchester, United Kingdom)

International Journal of Electrical and Computer Engineering
Vol 7, No 6: December 2017

An optimized empirical modelling for a 0.25µm gate length of highly strained channel of an InP-based pseudomorphic high electron mobility transistor (pHEMT) using InGaAs–InAlAs material systems is presented. An accurate procedure for extraction is described and tested using the pHEMT measured dataset of I-V characteristics and related multi-bias s-parameters over 20GHz frequency range. The extraction of linear and nonlinear parameters from the small signal and large signal pHEMT equivalent model are performed in ADS. The optimized DC and S-parameter model for the pHEMT device provides a basis for active device selection in the MMIC low noise amplifier circuit designs.