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W.M. Jubadi
University Tun Hussein Onn Malaysia, Malaysia
Computer Science & IT Electrical & Electronics Engineering

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Optimization of Empirical Modelling of Advanced Highly Strained In0.7Ga0.3As/In0.52Al0.48As pHEMTs for Low Noise Amplifier W.M. Jubadi; F. Packeer; M. Missous
International Journal of Electrical and Computer Engineering (IJECE) Vol 7, No 6: December 2017
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (627.636 KB) | DOI: 10.11591/ijece.v7i6.pp3002-3009

Abstract

An optimized empirical modelling for a 0.25µm gate length of highly strained channel of an InP-based pseudomorphic high electron mobility transistor (pHEMT) using InGaAs–InAlAs material systems is presented. An accurate procedure for extraction is described and tested using the pHEMT measured dataset of I-V characteristics and related multi-bias s-parameters over 20GHz frequency range. The extraction of linear and nonlinear parameters from the small signal and large signal pHEMT equivalent model are performed in ADS. The optimized DC and S-parameter model for the pHEMT device provides a basis for active device selection in the MMIC low noise amplifier circuit designs.
Co-Authors F. Packeer M. Missous