0.5 GHz-1.5 GHz Bandwidth 10W GaN HEMT RF Power Amplifier Design

Shiva Ghandi Isma Ilamaran (Multimedia University)
Zubaida Yusoff (Multimedia University)
Jahariah Sampe (University Kebangsaan Malaysia University)

International Journal of Electrical and Computer Engineering
Vol 8, No 3: June 2018

With the current development in wireless communication technology, the need for a wide bandwith in RF power amplifier (RF PA) is an essential. In this paper, the design and simulation of 10W GaN HEMT wideband RF PA will be presented. The Source-Pull and Load-Pull technique was used to design the input and output matching network of the RF PA. From the simulation, the RF PA achieved a flat gain between 15dB to 17dB from 0.5GHz to 1.5GHz. At 1.5GHz, the drain efficiency is simulated to achieve 36% at the output power of 40 dBm while the power added efficiency (PAE) was found to be 28.2%.