International Journal of Electrical and Computer Engineering
Vol 9, No 6: December 2019

Modeling and simulation of graphene field effect transistor (GFET)

Nanda B. S. (P E S College of Engineeing)
Puttaswamy P. S. (P E S College of Engineering)

Article Info

Publish Date
01 Dec 2019

Abstract

Graphene based top-gated Field effect transistor (GFET) is designed and simulated using the device simulator packages. The paper describes fabrication process and the device simulation aspects of the GFET device. Two devices with different gate lengths of 200nm and 350nm are simulated. Device simulations are carried out in open source TCAD software package. The results indicate a depletion FET type operation in which ON/OFF current ratio of 2.25 is obtained.

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Journal Info
International Journal of Electrical and Computer Engineering
Website

Abbrev

IJECE

Publisher

Institute of Advanced Engineering and Science

Subject

Computer Science & IT Electrical & Electronics Engineering

Description

International Journal of Electrical and Computer Engineering (IJECE, ISSN: 2088-8708, a SCOPUS indexed Journal, SNIP: 1.001; SJR: 0.296; CiteScore: 0.99; SJR & CiteScore Q2 on both of the Electrical & Electronics Engineering, and Computer Science) is the official publication of the Institute of ...