Electronic properties of zigzag silicene nanoribbons with single vacancy defect

Mu Wen Chuan (School of Electrical Engineering Faculty of Engineering Universiti Teknologi Malaysia 81310 Skudai Johor)
Kien Liong Wong (School of Electrical Engineering Faculty of Engineering Universiti Teknologi Malaysia 81310 Skudai Johor)
Afiq Hamzah (School of Electrical Engineering Faculty of Engineering Universiti Teknologi Malaysia 81310 Skudai Johor)
Nurul Ezaila Alias (School of Electrical Engineering Faculty of Engineering Universiti Teknologi Malaysia 81310 Skudai Johor)
Cheng Siong Lim (School of Electrical Engineering Faculty of Engineering Universiti Teknologi Malaysia 81310 Skudai Johor)
Michael Loong Peng Tan (School of Electrical Engineering Faculty of Engineering Universiti Teknologi Malaysia 81310 Skudai Johor)

Indonesian Journal of Electrical Engineering and Computer Science
Vol 19, No 1: July 2020

Silicene is envisaged as one of the two-dimensional (2D) materials for future nanoelectronic applications. In addition to its extraordinary electronic properties, it is predicted to be compatible with the silicon (Si) fabrication technology. By using nearest neighbour tight-binding (NNTB) approach, the electronic properties of zigzag silicene nanoribbons (ZSiNRs) with single vacancy (SV) defects are modelled and simulated. For 4-ZSiNR with L=2, the band structures and density of states (DOS) are computed based on SV incorporated ZSiNRs at varying defect locations. The results show that the SV defect will shift the band structure and increase the peak of DOS while the bandgap remain zero. This work provides a theoretical framework to understand the impact of SV defect which is an inevitable non-ideal effect during the fabrication of silicene nanoribbons (SiNRs).