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All Journal Indonesian Journal of Electrical Engineering and Informatics (IJEEI) Indonesian Journal of Electrical Engineering and Computer Science
Cheng Siong Lim
School of Electrical Engineering Faculty of Engineering Universiti Teknologi Malaysia 81310 Skudai johor
Computer Science & IT Electrical & Electronics Engineering

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Graphene Nanoribbon Simulator of Vacancy Defects On Electronic Structure Kien Liong Wong; Mohamad Azri Sufi Mahadzir; Wee Khang Chong; Mohd Shahrizal Rusli; Cheng Siong Lim; Michael Loong Peng Tan
Indonesian Journal of Electrical Engineering and Informatics (IJEEI) Vol 6, No 3: September 2018
Publisher : IAES Indonesian Section

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.52549/ijeei.v6i3.576

Abstract

Graphene Nanoribbon Simulator (GNRSIM) is developed using MATLAB Graphical User Interface Development Environment to study the electronics properties of graphene nanoribbons (GNRs). The main focus of this research is the simulation effects of single vacancy 1 in graphene nanoribbons lattices on electronic structure. The band structure and density of states are explored by using tight binding approximation where a Hamiltonian operator with nearest-neighbor interactions is introduced. The simulator has a wide range of input parameters where user can select armchair or zigzag GNR. The size of the lattices namely width and length can be varied. The location of the vacancy defect can be pinpoint by providing the row and column of the missing atom. The limitation of GNRSIM at present is that it can only accept a single atom vacancy. GNRSIM is able to be executed as a standalone application software in understanding the fundamental properties of semiconductor material and device engineering through ab-initio calculations.
Electronic properties of zigzag silicene nanoribbons with single vacancy defect Mu Wen Chuan; Kien Liong Wong; Afiq Hamzah; Nurul Ezaila Alias; Cheng Siong Lim; Michael Loong Peng Tan
Indonesian Journal of Electrical Engineering and Computer Science Vol 19, No 1: July 2020
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.11591/ijeecs.v19.i1.pp76-84

Abstract

Silicene is envisaged as one of the two-dimensional (2D) materials for future nanoelectronic applications. In addition to its extraordinary electronic properties, it is predicted to be compatible with the silicon (Si) fabrication technology. By using nearest neighbour tight-binding (NNTB) approach, the electronic properties of zigzag silicene nanoribbons (ZSiNRs) with single vacancy (SV) defects are modelled and simulated. For 4-ZSiNR with L=2, the band structures and density of states (DOS) are computed based on SV incorporated ZSiNRs at varying defect locations. The results show that the SV defect will shift the band structure and increase the peak of DOS while the bandgap remain zero. This work provides a theoretical framework to understand the impact of SV defect which is an inevitable non-ideal effect during the fabrication of silicene nanoribbons (SiNRs).
Co-Authors Afiq Hamzah Kien Liong Wong Michael Loong Peng Tan Mohamad Azri Sufi Mahadzir Mohd Shahrizal Rusli Mu Wen Chuan Nurul Ezaila Alias Wee Khang Chong