Jurnal Penelitian Fisika dan Aplikasinya (JPFA)
Vol 2, No 1 (2012)

GROWTH AND PROPERTIES OF STACKED SELF-ASSEMBLED IN0.5GA0.5AS QUANTUM DOTS

Aryanto, Didik (Unknown)
Othaman, Zulkafli (Unknown)
Ismail, Abd. Khamim (Unknown)

Article Info

Publish Date
14 Jun 2012

Abstract

Self-assembled In0.5Ga0.5As quantum dots (QDs) were grown using metal-organic chemical vapor deposition (MOCVD) on GaAs (100) substrate with different number of stacking QDs layers. Surface study using atomic force microscopy (AFM) shows that surface morphology of the self-assembled QDs change with different number of stacking QDs layers caused by the previous QDs layers and the thickness of the GaAs spacer layers. PL measurement shows variation in the PL spectra as a function of number of stacking layers of In0.5Ga0.5As QDs. The PL peak positions blue-shifted from 1225 nm to 1095 nm and dramatically increase in intensity with increasing number of stacking QDs layers.

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Journal Info
Jurnal Penelitian Fisika dan Aplikasinya (JPFA)
Website

Abbrev

JPFA

Publisher

Universitas Negeri Surabaya

Subject

Astronomy Earth & Planetary Sciences Education Materials Science & Nanotechnology Physics

Description

Jurnal Penelitian Fisika dan Aplikasinya (JPFA) is available for free (open access) to all readers. The articles in JPFA include developments and researches in Physics Education, Classical Physics, and Modern Physics (theoretical studies, experiments, and its applications), including: Physics ...