Simulation study of memristor aided logic (MAGIC) based on CMOS NOR gate

Wan Mohamad Izzat Wan Zain (Universiti Teknologi MARA)
Syed Abdul Mutalib Al Junid (Universiti Teknologi MARA)
Mohd Faizul Md Idros (Universiti Teknologi MARA)
Abdul Hadi Abdul Razak (Universiti Teknologi MARA)
Fairul Nazmie Osman (Universiti Teknologi MARA)
Abdul Karimi Halim (Universiti Teknologi MARA)
Muhammad Adib Haron (Universiti Teknologi MARA)

Bulletin of Electrical Engineering and Informatics
Vol 9, No 5: October 2020

Memristor is a non-volatile new technology memory where the data stored as a resistance which the performance is influenced by the stateful logic design. Therefore, this study is an attempt to investigate the performance of the MAGIC NOR Gate stateful logic design using LTSPICE and targeted to 2 bits memory application. The objective is to investigate the performance of memristor based stateful logic logic design and schematics for memory application. Furthermore, the study been carried out by implementing the MAGIC NOR gate stateful logic schematic, then simulate the design in order to see the effects of performance including the electrical parameters compared to the others. Evidently, the improvement of MAGIC NOR gate contributes in reducing the number of NOR gate and CMOS count. Besides, the MAGIC NOR gates takes parallel inputs topology and eliminate the threshold voltage compared to IMPLY logic. Nevertheless, larger numbers of memristor required to stable the output consistency in MAGIC NOR gate schematic.