APTIKOM Journal on Computer Science and Information Technologies (CSIT)
Vol 5 No 1 March (2020): APTIKOM Journal on Computer Science and Information Technologies (CSIT)

EXTRACTION OF SERIES RESISTANCE AND MOBILITY DEGRADATION IN MOSFETS USING ITERATIVE METHOD

Maouhoub, Noureddine (Unknown)
Rais, Khalid (Unknown)

Article Info

Publish Date
26 Mar 2020

Abstract

Series resistance and mobility attenuation parameter are parasitic phenomena that limit the scaling of advanced MOSFETs. In this work, an iterative method is proposed to extract the series resistance and mobility degradation parameter in short channel MOSFETs. It also allows us to extract the surface roughness amplitude. The principle of this method is based on the exponential model of effective mobility and the least squares methods. From these, two analytical equations are obtained to determine the series resistance and the low field mobility as function of the mobility degradation. The mobility attenuation parameter is extracted using an iterative procedure to minimize the root means squared error (RMSE) value. The results obtained by this technique for a single short channel device have shown the good agreement with measurements data at strong inversion.  

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Journal Info
APTIKOM Journal on Computer Science and Information Technologies (CSIT)
Website

Abbrev

csit

Publisher

Asosiasi Perguruan Tinggi Informatika dan Ilmu Komputer

Subject

Computer Science & IT Education Electrical & Electronics Engineering Energy Materials Science & Nanotechnology

Description

APTIKOM Journal on Computer Science and Information Technologies is a peer-reviewed international journal that publish original research article, review papers, short communications that will have an immediate impact on the ongoing research in all areas of Computer Science, Informatics, Electronics ...