Investigation of the static current gain for InP/InGaAs single heterojunction bipolar transistor

Jihane Ouchrif (Departement of Electrical Engineering, EEA&TI Laboratory, Hassan II University of Casablanca FST Mohammedia, PO Box 146 Mohammedia 20650, Morocco.)
Abdennaceur Baghdad (Departement of Electrical Engineering, EEA&TI Laboratory, Hassan II University of Casablanca FST Mohammedia, PO Box 146 Mohammedia 20650, Morocco.)
Aicha Sshel (Departement of Electrical Engineering, EEA&TI Laboratory, Hassan II University of Casablanca FST Mohammedia, PO Box 146 Mohammedia 20650, Morocco.)
Abdelmajid Badri (Departement of Electrical Engineering, EEA&TI Laboratory, Hassan II University of Casablanca FST Mohammedia, PO Box 146 Mohammedia 20650, Morocco.)
Abdelhakim Ballouk (Departement of Electrical Engineering, EEA&TI Laboratory, Hassan II University of Casablanca FST Mohammedia, PO Box 146 Mohammedia 20650, Morocco.)

Indonesian Journal of Electrical Engineering and Computer Science
Vol 13, No 3: March 2019

Heterojunction Bipolar Transistors are being used increasingly in communication systems due to their electrical performances. They are considered as excellent electronic devices. This paper presents an investigation of the static current gain β based on two technological parameters related to the device geometry for InP/InGaAs Single Heterojunction Bipolar Transistor (SHBT). These parameters are the base width  and the emitter length . We used Silvaco’s TCAD tools to design the device structure, and to extract the static current gain β from I-V output characteristics figures. According to this investigation, we determined the optimal values of the examined parameters which allow obtaining the highest static current gain β.