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Abdelhakim Ballouk
Departement of Electrical Engineering, EEA&TI Laboratory, Hassan II University of Casablanca FST Mohammedia, PO Box 146 Mohammedia 20650, Morocco.

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Investigation of the static current gain for InP/InGaAs single heterojunction bipolar transistor Jihane Ouchrif; Abdennaceur Baghdad; Aicha Sshel; Abdelmajid Badri; Abdelhakim Ballouk
Indonesian Journal of Electrical Engineering and Computer Science Vol 13, No 3: March 2019
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.11591/ijeecs.v13.i3.pp1345-1354

Abstract

Heterojunction Bipolar Transistors are being used increasingly in communication systems due to their electrical performances. They are considered as excellent electronic devices. This paper presents an investigation of the static current gain β based on two technological parameters related to the device geometry for InP/InGaAs Single Heterojunction Bipolar Transistor (SHBT). These parameters are the base width  and the emitter length . We used Silvaco’s TCAD tools to design the device structure, and to extract the static current gain β from I-V output characteristics figures. According to this investigation, we determined the optimal values of the examined parameters which allow obtaining the highest static current gain β.
Co-Authors Abdelmajid Badri Abdennaceur Baghdad Aicha Sshel Jihane Ouchrif