A Cross Slot Coupling to Enhance Bandwidth of Dual-Layer SIW Structure

M. N. Hafiz (Wireless Communication Center (WCC), Universiti Teknologi Malaysia (UTM))
M. H. Jamaluddin (Wireless Communication Center (WCC), Universiti Teknologi Malaysia (UTM))
R. Selvaraju (Wireless Communication Center (WCC), Universiti Teknologi Malaysia (UTM))

Indonesian Journal of Electrical Engineering and Computer Science
Vol 10, No 2: May 2018

In this paper, design characteristics of cross slot coupling have been explored and realized in a proposed dual-layer SIW prototype for bandwidth enhancement at 10.0 GHz. The assembled prototype consists of two SMA-microstrip input/output interface with low-loss microstrip-taper via transition and two manually stacked SIW structures electrically connected via a small cross slot coupling design. The proposed dual-layer SIW structure is designed using CST software and fabricated using conventional Printed Circuit Board (PCB) manufacturing process on Rogers 4003 C with  = 3.38 and  = 0.813 mm. The close agreement between simulated and measured results is observed within a frequency range studied of 9.2 GHz to 11.2 GHz with 19.0 % bandwidth performance. The used of cross slot coupling design in the assembled dual-layer SIW structure indicated 9.0 % bandwidth enhancement compared to the conventional multilayer design with rectangular slot coupling. The assembled dual-layer SIW structure with cross slot coupling design shows potential in several RF applications such as radar and satellite communication.