Article Per Year (5 Year)
p-Index From 2021 - 2026
0
P-Index
This Author published in this journals
All Journal Indonesian Journal of Electrical Engineering and Computer Science
R. Selvaraju
Wireless Communication Center (WCC), Universiti Teknologi Malaysia (UTM)

Published : 2 Documents Claim Missing Document
Claim Missing Document
Check
Articles

Found 2 Documents
Search

 1 
A MIMO H-shape Dielectric Resonator Antenna for 4G Applications S. Salihah; M. H. Jamaluddin; R. Selvaraju; M. N. Hafiz
Indonesian Journal of Electrical Engineering and Computer Science Vol 10, No 2: May 2018
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.11591/ijeecs.v10.i2.pp648-653

Abstract

In this article, a Multiple-Input-Multiple-Output (MIMO) H-shape Dielectric Resonator Antenna (DRA) is designed and simulated at 2.6 GHz for 4G applications. The proposed structure consists of H-shape DRA ( =10) which is mounted on FR4 substrate ( =4.6), and feed by two different feeding mechanisms. First, microstrip with slot coupling as Port 1. Second, coaxial probe as Port 2. The electrical properties of the proposed MIMO H-shape DRA in term of return loss, bandwidth and gain are completely obtained by using CST Microwave Studio Suite Software. The simulated results demonstrated a return loss more than 20 dB, an impedance bandwidth of 26 % (2.2 – 2.9 GHz), and gain of 6.11 dBi at Port 1. Then, a return loss more than 20 dB, an impedance bandwidth of 13 % (2.2 – 2.7 GHz), and gain of 6.63 dBi at Port 2. Both ports indicated impedance bandwidth more than 10 %, return loss lower than 20 dB, and gain more than 10 dBi at 2.6 GHz. The simulated electrical properties of the proposed design show a good potential for LTE applications.
A Cross Slot Coupling to Enhance Bandwidth of Dual-Layer SIW Structure M. N. Hafiz; M. H. Jamaluddin; R. Selvaraju
Indonesian Journal of Electrical Engineering and Computer Science Vol 10, No 2: May 2018
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.11591/ijeecs.v10.i2.pp617-622

Abstract

In this paper, design characteristics of cross slot coupling have been explored and realized in a proposed dual-layer SIW prototype for bandwidth enhancement at 10.0 GHz. The assembled prototype consists of two SMA-microstrip input/output interface with low-loss microstrip-taper via transition and two manually stacked SIW structures electrically connected via a small cross slot coupling design. The proposed dual-layer SIW structure is designed using CST software and fabricated using conventional Printed Circuit Board (PCB) manufacturing process on Rogers 4003 C with  = 3.38 and  = 0.813 mm. The close agreement between simulated and measured results is observed within a frequency range studied of 9.2 GHz to 11.2 GHz with 19.0 % bandwidth performance. The used of cross slot coupling design in the assembled dual-layer SIW structure indicated 9.0 % bandwidth enhancement compared to the conventional multilayer design with rectangular slot coupling. The assembled dual-layer SIW structure with cross slot coupling design shows potential in several RF applications such as radar and satellite communication.
Co-Authors M. H. Jamaluddin M. N. Hafiz S. Salihah